TECHNICAL DATA
N-CHANNEL J-FET
Qualified per MIL-PRF-19500/428
Devices
2N4416A
Qualified Level
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
Parameters / Test Conditions
Gate-Source Voltage
Drain-Source Voltage
Drain-Gate Voltage
Gate Current
Power Dissipation
T
A
= +25
0
C
(1)
Operating Junction & Storage Temperature Range
(1) Derate linearly 1.7 mW/
0
C for T
A
> +25
0
C.
Symbol
V
GS
V
DS
V
DG
I
G
P
T
T
op
, T
stg
2N4416A
-35
35
35
10
300
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mWdc
0
C
TO-72*
(TO-206AF)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= +25
0
C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Gate-Source Breakdown Voltage
V
(BR)GSS
-35
V
DS
= 0, I
G
= 1.0
µAdc
Gate Reverse Current
V
DS
= 0, V
GS
= 20 Vdc
I
GSS
Drain Current
V
DS
= 15 Vdc
I
DSS
Max.
Units
Vdc
-0.1
15
-5.5
-6.0
1
ηAdc
mAdc
5
-1
-2.5
Gate-Source Voltage
V
DS
= 15 Vdc, I
D
= 0.5 mAdc
Gate-Source Cutoff Voltage
V
DS
= 15 Vdc, I
D
= 1.0
ηAdc
Gate-Source Forward Voltage
V
DS
= 0 Vdc, I
G
= 1.0 mAdc
V
GS
V
GS(off)
V
GSF
Vdc
Vdc
Vdc
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