TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397
Devices
2N3743
2N4930
2N4931
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Sym
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
2N3743 2N4930 2N4931 Unit
300
300
200
250
200
250
5.0
200
1.0
5.0
-65 to +200
Vdc
Vdc
Vdc
mAdc
W
W
0
C
Unit
C/W
@T
A
= +25
0
C
1
@T
C
= +25
0
C
2
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 5.71 mW/ C for T
A
> +25 C
2)
Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
Max.
35
0
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 1.0 mAdc
2N3743
2N4930
2N4931
2N3743
2N4930
2N4931
V
(BR)
CEO
300
200
250
300
200
250
5.0
250
250
250
Vdc
Collector-Emitter Breakdown Voltage
I
C
= 100
µAdc
V
(BR)
CBO
Vdc
Emitter-Base Breakdown Voltage
I
E
= 100
µAdc
Collector-Base Cutoff Current
V
CB
= 250 Vdc
V
CB
= 150 Vdc
V
CB
= 200 Vdc
V
(BR)
EBO
2N3743
2N4930
2N4931
Vdc
I
CBO
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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