2N5002
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Thermal Impedance
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BE
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Test Conditions
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 2.5 A, V
CE
= 5 Volts
T
A
= -55°C
V
CE
= 5 Volts, I
C
= 2.5 A
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
I
C
= 2.5 A, I
B
= 250 mA
I
C
= 5 A, I
B
= 500 mA
Symbol
V
(BR)CEO
I
CEO
I
CEX
I
CES1
I
CES2
I
EBO1
I
EBO2
θ
JC
Test Conditions
I
C
= 100 mA
V
CE
= 40 Volts
V
CE
= 60 Volts, V
EB
= 2 Volts,
T
A
= 150°C
V
CE
= 60 Volts
V
CE
= 100 Volts
V
EB
= 4 Volts
V
EB
= 5.5 Volts
Min
80
50
500
1
1
1
1
10
Typ
Max
Units
Volts
µA
µA
µA
mA
mA
°C/W
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
20
30
20
15
Typ
Max
90
Units
Base-Emitter Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Small Signal Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Saturated Turn-On Time
Rise Time
Fall Time
Saturated Turn-Off Time
1.45
1.45
2.20
0.75
1.50
Volts
Volts
Volts
Symbol
|h
FE
|
h
FE
C
OBO
t
ON
t
r
t
f
t
OFF
Test Conditions
V
CE
= 5 Volts, I
C
= 500 mA,
f = 10 MHz
V
CE
= 5 Volts, I
C
= 100 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Min
6
20
Typ
Max
Units
250
pF
I
C
= 5 A, I
B1
=I
B2
= 500 mA,
V
BE
= 3.7 Volts, RL = 6
Ω
0.5
1.4
0.5
1.5
µs
Copyright 2002
Rev. C
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
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MICROSEMI [ MICROSEMI CORPORATION ]
