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2N5109 参数 Datasheet PDF下载

2N5109图片预览
型号: 2N5109
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管微波放大器
文件页数/大小: 5 页 / 281 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5109
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, To-39 packaged VHF/UHF Transistor
1.2 GHz Current-Gain Bandwidth Product @ 50mA
Maximum Unilateral Gain = 12dB (typ) @ 200 MHz
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
IC
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
20
40
3.0
400
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
C
= 75ºC (1)
Derate above 25ºC
2.5
20
Watts
mW/ ºC
Note 1. Total Device dissipation at T
A
=
25ºC is 1 Watt.
MSC1304.PDF 10-25-99