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2N5179 参数 Datasheet PDF下载

2N5179图片预览
型号: 2N5179
PDF下载: 下载PDF文件 查看货源
内容描述: 射频与微波离散小功率三极管 [RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管微波放大器
文件页数/大小: 5 页 / 161 K
品牌: MICROSEMI [ MICROSEMI CORPORATION ]
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140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N5179
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Silicon NPN, TO-72 packaged VHF/UHF Transistor
Low Noise, NF = 4.5 dB (max) @ 200 MHz
High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc
2
1
3
4
Characterized with S-Parameters
1. Emitter
2. Base
3. Collector
4. Case
TO-72
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator
applications.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
12
20
2.5
50
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25ºC
Derate above 25ºC
300
1.71
mWatts
mW/ ºC
MSC1305.PDF 10-25-99