2N5581
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N5581J)
•
JANTX level (2N5581JX)
•
JANTXV level (2N5581JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose switching
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0400
Reference document:
MIL-PRF-19500/423
Benefits
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
I
C
P
T
P
T
T
J
T
STG
T
C
= 25°C unless otherwise specified
Rating
50
75
800
500
2.86
2
11.43
-55 to+200
-55 to+200
Unit
Volts
Volts
mA
mW
mW/°C
W
mW/°C
°C
°C
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
MICROSEMI [ MICROSEMI CORPORATION ]
