TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464
Devices
2N5685
2N5686
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
2N5685 2N5686 Units
60
60
80
80
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
C
= +25
0
C
(1)
@ T
C
= +100
0
C
(1)
Operating & Storage Junction Temperature Range
5.0
15
50
300
171
-55 to +200
Max.
.0584
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
R
θ
JC
Derate linearly 1.715 W/ C between T
C
= 25
0
C and T
C
= 200
0
C
0
0
TO-3*
(TO-204AA)
1)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Cutoff Current
V
CE
= 30 Vdc
V
CE
= 40 Vdc
Collector-Emitter Cutoff Current
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
2N5685
2N5686
V
(BR)
CEO
60
80
500
500
500
500
2.0
2.0
Vdc
I
CEO
µAdc
I
CEX
µAdc
I
CBO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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