140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF581/MRF581A
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Low Noise - 2.5 dB @ 500 MHZ
High Gain, Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
Ftau - 5.0 GHz @ 10v, 75mA
Cost Effective MacroX Package
Macro X
DESCRIPTION:
Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
MRF581
18
30
2.5
200
MRF581A
15
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
P
D
D
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
-65 to +150
Maximum Junction Temperature
150
ºC
ºC
2.5
25
1.25
10
Watts
mW/ ºC
Watts
mW/ ºC
Tstg
T
Jmax
MSC1318.PDF 10-25-99
MICROSEMI [ MICROSEMI CORPORATION ]
