SRDA70-4
STEERING DIODE TVS ARRAY
SCOTTSDALE DIVISION
DESCRIPTION
These low capacitance diode arrays are multiple, discrete, isolated junctions
fabricated by a planar process and mounted in a SO-8 package for use as
steering diodes protecting up to four I/O ports from ESD, EFT, or surge by
directing them either to the positive side of the power supply line or to ground
(see schematic, page 2). An external TVS diode may be added between the
positive supply line and ground to prevent overvoltage on the supply rail.
These arrays offer many advantages of integrated circuits such as high-
density packaging and improved reliability. This is a result of fewer pick and
place operations, smaller footprint, smaller weight, and elimination of various
discrete packages that may not be as user friendly in PC board mounting.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
TVS array
TM
SERIES
WWW .
Microsemi
.C
OM
FEATURES
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Diode Array to Protect Four I/O Lines
Surge protection per IEC 61000-4-2, IEC 61000-4-4
and IEC61000-4-5 (1 kV, 24 A at 8/20 µs)
UL 94V-0 Flammability Classification
Low Capacitance for High-Speed Interfaces
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APPLICATIONS / BENEFITS
Data Line Protection
Latch-Up Protection
RS-232 & RS-422 Interface Networks
Computer I/O Ports
LAN
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MAXIMUM RATINGS
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Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Peak Pulse Power : 500 Watts (8/20 µs, Figure 1)
Peak Pulse Current : 24 Amps (8/20 µs, Figure 1)
Pulse Repetition Rate: < .01%
Lead Soldering Temperature: 260°C for 10 seconds
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MECHANICAL AND PACKAGING
Molded SO-8 Surface Mount
Weight 0.066 grams (approximate)
Marking: Logo, device marking code, date code
Pin #1 defined by dot on top of package
Tape & Reel per EIA Standard 481
13 inch reel; 2,500 pieces (OPTIONAL)
•
Carrier tubes; 95 pcs (STANDARD)
ELECTRICAL CHARACTERISTICS
PEAK
REVERSE
VOLTAGE
V
RWM
BREAKDOWN
VOLTAGE
V
BR
@50
µA
VOLTS
MIN
85
FORWARD
CLAMPING
VOLTAGE
V
FC
@ 1 Amp
(Figure 2)
VOLTS
MAX
1.3
FORWARD
CLAMPING
VOLTAGE
V
FC
@ 10 Amp
(Figure 2)
VOLTS
MAX
3.3
REVERSE
LEAKAGE
CURRENT
I
R
@ V
RWM
µA
MAX
5
CAPACITANCE
(f=1 MHz)
C
@ 0V
Between I/O
pins and ground
pF
MAX
15
CAPACITANCE
(f=1 MHz)
C
@ 0V
PART
NUMBER
DEVICE
MARKING
SRDA70-4
DA70-4
VOLTS
MAX
SRDA70-4
SM70-4
70
Between
I/O pins
pF
TYP
4
Copyright
2004
8-26-2004 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
MICROSEMI [ MICROSEMI CORPORATION ]
