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2N4351 参数 Datasheet PDF下载

2N4351图片预览
型号: 2N4351
PDF下载: 下载PDF文件 查看货源
内容描述: 增强型N沟道场效应管 [an enhancement mode N-Channel Mosfet]
分类和应用: 晶体小信号场效应晶体管
文件页数/大小: 1 页 / 310 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
2N4351
N-CHANNEL MOSFET
The 2N4351 is an enhancement mode N-Channel Mosfet
The 2N4351 is an enhancement mode N-Channel
Mosfet designed for use as a General Purpose amplifier
or switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 2N4351 
HIGH DRAIN CURRENT 
HIGH GAIN 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
I
D
= 100mA
 
g
fS
= 1000µS 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
2N4351 Features:
Maximum Power Dissipation 
Continuous Power Dissipation  
Low ON Resistance
MAXIMUM CURRENT
Low Capacitance
Drain to Source (Note 1) 
High Gain
MAXIMUM VOLTAGES 
High Gate Breakdown Voltage
Drain to Body 
Low Threshold Voltage
Drain to Source 
Peak Gate to Source (Note 2) 
2N4351 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
BV
DSS
 
Drain to Source Breakdown Voltage 
25 
‐‐ 
‐‐ 
 
V
DS(on)
 
Drain to Source “On” Voltage 
‐‐ 
‐‐ 
V
GS(th)
 
Gate to Source Threshold Voltage 
‐‐ 
I
GSS
 
Gate Leakage Current 
‐‐ 
‐‐ 
10 
pA 
I
DSS
 
I
D(on)
 
g
fs
 
r
DS(on)
 
‐65°C to +200°C 
‐55°C to +150°C 
375mW 
100mA 
25V 
25V 
±125V 
CONDITIONS 
I
= 10µA,   V
GS
 = 0V 
                   I
= 2mA,   V
GS
 = 10V 
V
DS
 = 10V,    I
= 10µA 
V
GS 
= ±30V,   V
DS
 = 0V 
C
rss
 
C
iss
 
C
db
 
 
 
 
 
 
 
 
SWITCHING CHARACTERISTICS                                                                                                                                     TIMING WAVEFORMS 
SYMBOL 
CHARACTERISTIC 
MAX 
UNITS 
t
d(on)
 
Turn On Delay Time 
45 
 
ns 
t
r
 
Turn On Rise Time 
65 
t
d(off)
 
Turn Off Delay Time 
60 
t
f
 
Turn Off Fall Time 
100 
 
 
 
 
                                  SWITCHING TEST CIRCUIT 
Available Packages:
2N4351 in TO-72
2N4351 in bare die.
TO-72 (Bottom View)
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N4351 serviceability may be impaired. 
Note 2 ‐ Device must not be tested at ±125V more than once or longer than 300ms.
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx