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2N4392_TO-18 参数 Datasheet PDF下载

2N4392_TO-18图片预览
型号: 2N4392_TO-18
PDF下载: 下载PDF文件 查看货源
内容描述: 单N沟道JFET开关 [Single N-Channel JFET switch]
分类和应用: 开关
文件页数/大小: 1 页 / 294 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
2N4392
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix 2N4392
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N4392 
LOW ON RESISTANCE 
r
DS(on) 
≤ 60Ω 
LOW GATE OPERATING CURRENT 
I
D(off) 
= 5pA 
FAST SWITCHING 
t
(ON)
 ≤= 15ns 
2N4392 Benefits:
1
ABSOLUTE MAXIMUM RATINGS
 @ 25°C (unless otherwise noted) 
Low Error Voltage
Maximum Temperatures 
High-Speed Analog Circuit Performance
Storage Temperature 
‐65°C to +200°C 
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Operating Junction Temperature 
‐55°C to +200°C 
Eliminates Additional Buffering
Maximum Power Dissipation 
Continuous Power Dissipation  
1800mW 
2N4392 Applications:
MAXIMUM CURRENT
Analog Switches
Gate Current (Note 1) 
I
G
 = 50mA 
Choppers,
Sample-and-Hold
MAXIMUM VOLTAGES 
Normally “On” Switches, Current Limiters
Gate to Drain Voltage /  Gate to Source Voltage 
‐40V 
2N4392 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐40 
‐‐ 
‐‐ 
 
I
= ‐1µA,   V
DS
 = 0V 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐2 
‐‐ 
‐5 
V
DS
 = 20V, I
D
 = 1nA 
V
GS(F)
 
Gate to Source Forward Voltage 
‐‐ 
0.7 
                   I
=  1mA,   V
DS
 = 0V 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.25 
‐‐ 
V
GS 
= 0V,   I
D
 = 3mA 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.3 
0.4 
 
V
GS 
= 0V,   I
D
 = 6mA 
V
DS(on)
 
Drain to Source On Voltage 
‐‐ 
0.35 
‐‐ 
 
V
GS 
= 0V,   I
D
 = 12mA 
2
I
DSS
 
Drain to Source Saturation Current
 
25 
‐‐ 
75 
mA 
V
DS
 = 20V, V
GS 
= 0V 
I
GSS
 
Gate Reverse Current 
‐‐ 
‐5 
‐100 
 
V
GS 
= ‐20V,  V
DS
 = 0V 
I
G
 
 
I
D(off)
 
 
r
DS(on)
 
2N4392 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
The 2N4392 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
g
fs
 
g
os
 
r
ds(on)
 
C
iss
 
C
rss
 
C
rss
 
C
rss
 
e
n
 
SYMBOL 
t
d(on)
 
t
r
 
t
d(off)
 
t
f
 
Equivalent Input Noise Voltage 
CHARACTERISTIC 
 
Turn On Time 
 
Turn Off Time 
Forward Transconductance 
Output Conductance 
Input Capacitance 
 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
mS 
µS 
Ω 
 
 
pF 
25 
‐‐ 
12 
3.3 
3.2 
2.8 
TYP 
13 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
MIN 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
Drain to Source On Resistance 
‐‐ 
60 
14 
‐‐ 
3.5 
‐‐ 
‐‐ 
MAX 
15 
35 
20 
nV/√Hz 
UNITS 
 
 
ns 
 
CONDITIONS 
V
DS
 = 20V,  I
D
 = 1mA,  f = 1kHz 
V
DS
 = 20V,  I
D
 = 1mA,  f = 1kHz 
V
GS
 = 0V,  I
D
 = 0A,  f = 1kHz 
V
DS
 = 20V,   V
GS
 = 0V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐5V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐7V,  f = 1MHz 
V
DS
 = 0V,   V
GS
 = ‐12V,  f = 1MHz 
V
DS
 = 10V,  I
D
 = 10mA,  f = 1kHz 
2N4392 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
 
 
V
DD
 = 10V,   V
GS(H)
 = 0V 
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired 
             2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3% 
2N4392 SWITCHING CIRCUIT PARAMETERS                                                                                                                                         SWITCHING CIRCUIT 
V
GS(L)
 
‐7V 
 
TO-18 (Bottom View)
R
L
 
1600Ω 
 
I
D(on)
 
6mA 
 
 
 
 
Available Packages:
 
 
 
2N4392 in TO-18
 
 
 
2N4392 in bare die.
 
 
 
Contact Micross for full package and die dimensions
 
 
 
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.