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2N5018_TO-18 参数 Datasheet PDF下载

2N5018_TO-18图片预览
型号: 2N5018_TO-18
PDF下载: 下载PDF文件 查看货源
内容描述: 单P沟道JFET开关 [a single P-Channel JFET switch]
分类和应用: 开关
文件页数/大小: 1 页 / 304 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
2N5018
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5018
The 2N5018 is a single P-Channel JFET switch
This p-channel analog switch is designed to provide low
on-resistance and fast switching.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX 2N5018 
ZERO OFFSET VOLTAGE 
LOW ON RESISTANCE 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
r
DS(on) 
≤ 75Ω 
Maximum Temperatures 
Storage Temperature 
‐55°C to +200°C 
Low Insertion Loss
Operating Junction Temperature 
‐55°C to +200°C 
No offset or error voltage generated by closed
Maximum Power Dissipation 
switch
Continuous Power Dissipation  
500mW 
Purely resistive
MAXIMUM CURRENT
2N5018 Applications:
Gate Current (Note 1) 
I
G
 = ‐50mA 
Analog Switches
MAXIMUM VOLTAGES 
Commutators
Gate to Drain Voltage 
V
GDS
 = 30V 
Choppers
Gate to Source Voltage 
V
GSS
 = 30V 
 
 
2N5018 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
30 
‐‐ 
‐‐ 
 
I
= 1µA,   V
DS
 = 0V 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐‐ 
‐‐ 
10 
V
DS
 = ‐15V, I
D
 = ‐1µA 
V
DS(on)
 
I
DSS
 
I
GSS
 
I
D(off)
 
I
DGO
 
r
DS(on)
 
2N5018 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
r
DS(on)
 
Drain to Source On Resistance 
‐‐ 
‐‐ 
75 
Ω 
I
= 0A,   V
GS
 = 0V,   f = 1kHz 
C
iss
 
Input Capacitance 
‐‐ 
‐‐ 
45 
pF 
V
DS
 = ‐15V, V
GS 
= 0V, f = 1MHz 
C
rss
 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
10 
V
DS
 = 0V, V
GS 
= 12V, f = 1MHz 
2N5018 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
 
UNITS 
CONDITIONS 
2N5018 Benefits:
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
15 
20 
15 
50 
 
 
ns 
V
GS
(L) = 12V 
V
GS
(H) = 0V 
 
See Switching Circuit 
 
 
 
 
 
 
 
 
 
 
Available Packages:
2N5018 in TO-18
2N5018 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
TO-18 (Bottom View)
t
d(on)
 
t
r
 
t
d(off)
 
t
f
 
                                                                                                                                                                                                              SWITCHING TEST CIRCUIT
2N5018 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
V
DD
 
‐6V 
V
GG
 
12V 
R
L
 
910Ω 
R
G
 
220Ω 
I
D(on)
 
‐6mA 
 
 
Micross Components Europe
 
 
 
 
 
 
 
 
Note 1 ‐  Absolute maximum ratings are limiting values above which 2N5018 serviceability may be impaired.
                                                                                                                 
Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility
is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication
or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx