3N190
P-CHANNEL MOSFET
The 3N190 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N190
LOW GATE LEAKAGE CURRENT
I
GSS
≤ ± 10pA
LOW TRANSFER CAPACITANCE
C
rss
≤ 1.0pF
1
The hermetically sealed TO-78 package is well suited
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
for high reliability and harsh environment applications.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
(See Packaging Information).
Operating Junction Temperature
‐55°C to +135°C
Maximum Power Dissipation
Continuous Power Dissipation (one side)
300mW
3N190 Features:
Continuous Power Dissipation (one side)
525mW
MAXIMUM CURRENT
Very high Input Impedance
Drain to Source
2
50mA
High Gate Breakdown Voltage
MAXIMUM VOLTAGES
Low Capacitance
Drain to Gate or Drain to Source
2
‐30V
2,3
Transient Gate to Source
±125V
Gate‐Gate Voltage
±80V
3N190 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
DSS
Drain to Source Breakdown Voltage
‐40
‐‐
‐‐
I
D
= ‐10µA
BV
SDS
Source to Drain Breakdown Voltage
‐40
‐‐
‐‐
I
S
= ‐10µA, V
BD
= 0V
V
V
GS
Gate to Source Voltage
‐3.0
‐‐
‐6.5
V
DS
= ‐15V, I
D
= ‐500µA
V
GS(th)
Gate to Source Threshold Voltage
‐2.0
‐‐
‐5.0
V
DS
= ‐15V, I
D
= ‐500µA
‐2.0
‐‐
‐5.0
V
DS
= V
GS
, I
D
= ‐10µA
I
GSSR
Gate Reverse Leakage Current
‐‐
‐‐
10
V
GS
= 40V
I
GSSF
I
DSS
I
SDS
I
D(on)
r
DS(on)
g
fs
The 3N190 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
Y
os
C
iss
Input Capacitance
‐‐
‐‐
4.5
pF
V
DS
= ‐15V, I
D
= ‐5mA , f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
1.0
C
oss
Output Capacitance
‐‐
‐‐
3.0
MATCHING CHARACTERISTICS 3N190
SYMBOL
LIMITS
CHARACTERISTIC
UNITS
CONDITIONS
MIN
MAX
g
fs1
/g
fs2
Forward Transconductance Ratio
0.85
1.0
ns
V
DS
= ‐15V, I
D
= ‐500µA , f = kHz
V
GS1‐2
Gate Source Threshold Voltage
‐‐
100
mV
V
DS
= ‐15V, I
D
= ‐500µA
5
Differential
V
DS
= ‐15V, I
D
= ‐500µA, T
S
= ‐55°C to +25°C
∆V
GS1‐2
/∆T
Gate Source Threshold Voltage
5
‐‐
100
µV/°C
Differential Change with Temperature
V
DS
= ‐15V, I
D
= ‐500µA, T
S
= +25°C to +125°C
SWITCHING CHARACTERISTICS
SYMBOL
CHARACTERISTIC
t
d(on)
Turn On Delay Time
t
r
Turn On Rise Time
t
off
Turn Off Time
MIN
‐‐
‐‐
‐‐
TYP
‐‐
‐‐
‐‐
MAX
15
30
50
UNITS
ns
CONDITIONS
V
DD
= ‐15V, I
D(on)
= ‐5mA, R
G
= R
L
= 1.4KΩ
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N190 serviceability may be impaired.
Note 2 – Per Transistor
Note 3 – Approximately doubles for every 10
°C in T
A
Device Schematic
Note 4 – Measured at end points,
T
A
and T
B
Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3%
TO-78 (Bottom View)
Available Packages:
3N190 in TO-72
3N190 in bare die.
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
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