IT124_PDIP 参数 Datasheet PDF下载

IT124

MONOLITHIC DUAL

NPN TRANSISTOR

Linear Systems replaces discontinued Intersil IT124

The IT124 is a monolithic pair of Super-Beta NPN

transistors mounted in a single P-DIP package. The

monolithic dual chip design reduces parasitics and

gives better performance while ensuring extremely tight

matching. The IT124 is a direct replacement for

discontinued Intersil IT124.

The 8 Pin P-DIP provides ease of manufacturing, and

the symmetrical pinout prevents improper orientation.

(See Packaging Information).

IT124 Features:

Very high gain

Tight matching

Low Output Capacitance

FEATURES 

Direct Replacement for INTERSIL IT124 

HIGH  GAIN

 

LOW OUTPUT CAPACITANCE 

V

BE

tracking

ABSOLUTE MAXIMUM RATINGS 

1

 

@ 25°C (unless otherwise noted) 

Maximum Temperatures 

Storage Temperature 

Operating Junction Temperature 

Maximum Power Dissipation 

Continuous Power Dissipation (One side) 

Continuous Power Dissipation (Both sides) 

Linear Derating factor (One side) 

Linear Derating factor (Both sides) 

Maximum Currents 

Collector Current 

 

MIN 

‐‐ 

TYP 

2 

MAX 

5 

UNITS 

mV 

h

FE

 ≥ 1500 @ 1 AND 10µA 

≤ 2.0pF 

≤ 5.0µV°C 

‐65°C to +200°C 

‐55°C to +150°C 

250mW 

500mW 

2.3mW/°C 

4.3mW/°C 

10mA 

 

CONDITIONS 

I

C 

= 10µA, V

CE 

= 1V 

CE 

= 1V 

CE 

= 1V 

MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 

SYMBOL 

CHARACTERISTIC 

|V

BE1 

– V

BE2 

| 

Base Emitter Voltage Differential 

∆|(V

BE1 

– V

BE2

|I

B1 

– I

 

ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

SYMBOL 

BV

CBO

 

BV

CEO

 

Collector to Emitter Voltage 

2 

BV

EBO

 

Emitter‐Base Breakdown Voltage 

6.2 

BV

CCO

 

Collector to Collector Voltage 

100 

h

FE

 

DC Current Gain 

1500 

1500 

V

CE

(SAT) 

Collector Saturation Voltage 

‐‐ 

I

EBO

 

Emitter Cutoff Current 

‐‐ 

I

CBO

 

Collector Cutoff Current 

‐‐ 

C

OBO

 

Output Capacitance 

‐‐ 

C

C1C2

 

Collector to Collector Capacitance 

‐‐ 

I

C1C2

 

Collector to Collector Leakage Current 

‐‐ 

f

T

 

Current Gain Bandwidth Product 

100 

NF 

Narrow Band Noise Figure 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

‐‐ 

0.5 

100 

100 

2 

2 

10 

‐‐ 

3 

V 

V 

V 

 

 

V 

pA 

pA 

pF 

pF 

nA 

MHz 

dB 

P-DIP (Top View)

I

C 

= 10µA, I

B 

= 0 

I

E 

= 10µA, I

C 

= 0

2

 

I

C 

= 10µA, I

E 

= 0 

I

C 

= 1µA, V

CE 

= 1V 

I

C 

= 10µA, V

CE 

= 1V 

I

C 

= 1mA, I

B 

= 0.1mA 

I

C 

= 0, V

EB 

= 3V 

I

E 

= 0, V

CB 

= 1V 

I

E 

= 0, V

CB 

= 1V 

V

CC 

= 0V 

V

CC 

= ±50V 

I

C 

= 100µA, V

CE 

= 1V 

I

C 

= 10µA,  V

CE 

= 3V, BW=200Hz, R

G

= 10KΩ,  

f = 1KHz 

Notes: 

1. Absolute Maximum ratings are limiting values above which serviceability may be impaired

2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 

 

Available Packages:

IT124 in P-DIP

IT124 available as bare die

Please contact Micross for full package and die dimensions:

Email:

chipcomponents@micross.com

Web:

www.micross.com/distribution.aspx

Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or

other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.