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J110 参数 Datasheet PDF下载

J110图片预览
型号: J110
PDF下载: 下载PDF文件 查看货源
内容描述: 线性系统的替代停产的Siliconix J110 [Linear Systems replaces discontinued Siliconix J110]
分类和应用: 晶体小信号场效应晶体管开关
文件页数/大小: 1 页 / 283 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
J110
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J110
This n-channel JFET is optimised for low noise high
performance switching. The part is particularly suitable
for use in low noise audio amplifiers. The SOT-23
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J110 
LOW ON RESISTANCE 
r
DS(on) 
≤ 18Ω 
FAST SWITCHING 
t
(on)
 ≤ 4ns 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
‐55°C to +150°C 
J110 Benefits:
Operating Junction Temperature 
‐55°C to +150°C 
Low On Resistance
Maximum Power Dissipation 
Low insertion loss
Continuous Power Dissipation  
350mW 
Low Noise
MAXIMUM CURRENT
J110 Applications:
Gate Current (Note 1) 
50mA 
Analog Switches
MAXIMUM VOLTAGES 
Commutators
Gate to Drain Voltage 
V
GDS
 = ‐25V 
Choppers
Gate to Source Voltage 
V
GSS
 = ‐25V 
 
 
J110 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐25 
‐‐ 
‐‐ 
 
I
= 1µA,   V
DS
 = 0V 
 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐0.5 
‐‐ 
‐4 
V
DS
 = 5V, I
D
 = 1µA 
V
GS(F)
 
Gate to Source Forward Voltage 
‐‐ 
0.7 
‐‐ 
I
= 1mA,   V
DS
 = 0V 
I
DSS
 
Drain to Source Saturation Current (Note 2) 
10 
‐‐ 
‐‐ 
mA 
V
DS
 = 15V, V
GS 
= 0V 
I
GSS
 
Gate Reverse Current 
‐‐ 
‐0.01 
‐3 
 
V
GS 
= ‐15V,  V
DS
 = 0V 
I
G
 
I
D(off)
 
r
DS(on)
 
 
J110 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
g
fs
 
g
os
 
Output Conductance 
‐‐ 
0.6 
‐‐ 
r
DS(on)
 
Drain to Source On Resistance 
‐‐ 
‐‐ 
18 
Ω 
V
GS 
= 0V, I
D
 = 0A,  f = 1kHz 
C
iss
 
Input Capacitance 
‐‐ 
60 
‐‐ 
 
V
DS
 = 0V, V
GS 
= 0V, f = 1MHz 
pF 
C
rss
 
Reverse Transfer Capacitance 
‐‐ 
11 
‐‐ 
V
DS
 = 0V, V
GS 
= ‐10V, f = 1MHz 
e
n
 
Equivalent Noise Voltage 
‐‐ 
3.5 
‐‐ 
nV/√Hz 
V
DS
 = 5V,  I
D
 = 10mA , f = 1kHz 
 
 
 
 
 
 
 
J110 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
 
UNITS 
CONDITIONS 
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
18 
 
 
ns 
V
DD
 = 1.5V 
V
GS
(H) = 0V 
 
See Switching Circuit 
 
 
 
 
 
 
 
 
Available Packages:
J110 in SOT-23
J110 in bare die.
Please contact Micross for full
package and die dimensions
SOT-23 (Top View)
t
d(on)
 
t
r
 
t
d(off)
 
t
f
 
Note 1 ‐ Absolute maximum ratings are limiting values above which J110 serviceability may be impaired.  Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
                                                                                                                 
J110 SWITCHING CIRCUIT PARAMETERS                                                                                                                          
‐5V 
R
L
 
150Ω 
I
D(on)
 
10mA 
 
 
 
 
Micross Components Europe
 
 
 
 
 
 
V
GS(L)
 
SWITCHING TEST CIRCUIT
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.