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J309_TO-92 参数 Datasheet PDF下载

J309_TO-92图片预览
型号: J309_TO-92
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道JFET [N-CHANNEL JFET]
分类和应用:
文件页数/大小: 1 页 / 287 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
J309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J309
The J309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The TO-92
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J309 
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE 
ABSOLUTE MAXIMUM RATINGS @ 25°C
1
  
G
pg
= 11.5dB 
NF = 2.7dB 
Maximum Temperatures 
Storage Temperature 
‐55°C to +150°C 
High Power Low Noise gain
Operating Junction Temperature 
‐55°C to +135°C 
Dynamic Range greater than 100dB
Maximum Power Dissipation 
Easily matched to 75Ω input
Continuous Power Dissipation  
350mW 
J309 Applications:
MAXIMUM CURRENT
Gate Current 
10mA 
UHV / VHF Amplifiers
MAXIMUM VOLTAGES 
Mixers
Gate to Drain Voltage or  Gate to Source Voltage 
 ‐25V 
Oscillators
 
 
 
 
J309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNIT 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐25 
‐‐ 
‐‐ 
V
DS
 = 0V, I
G
 = ‐1µA 
V
GS(F)
 
Gate to Source Forward Voltage 
0.7 
‐‐ 
V
DS
 = 0V, I
G
 = 10mA 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐1 
‐‐ 
‐4 
V
DS
 = 10V,  I
D
 = 1nA 
2
I
DSS
 
Drain to Source Saturation Current
 
12 
‐‐ 
30 
mA 
V
DS
 = 10V, V
GS 
= 0V 
I
G
 
Gate Operating Current (Note 3) 
‐‐ 
‐15 
‐‐ 
pA 
V
DG
 = 9V,  I
D
 = 10mA 
r
DS(on)
 
 
J309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
g
fs
 
g
os
 
C
iss
 
C
rss
 
e
n
 
Equivalent Noise Voltage 
‐‐ 
‐‐ 
nV/√Hz 
V
DS
 = 10V,    I
= 10mA ,  f = 100Hz 
 
 
 
 
 
 
 
J309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNIT 
CONDITIONS 
J309 Benefits:
Noise Figure 
Power Gain
3
 
Forward Transconductance 
Output Conductance 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
1.5 
2.7 
16 
11.5 
14 
13 
0.16 
0.55 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
dB 
dB 
 
 
 
 
mS 
Available Packages:
LSJ309 in TO-92
LSJ309 in bare die.
TO-92 (Bottom View)
NF 
G
pg
 
g
fg
 
g
og
 
 
 
 
 
V
DS
 = 10V,    I
= 10mA 
 
 
 
Note 1 ‐ Absolute maximum ratings are limiting values above which J309 serviceability may be impaired.  
Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3% 
 
 
 
Note 3 ‐ Measured at optimum input noise match 
 
 
 
 
Micross Components
 
Europe
 
 
 
 
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx