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LS120A_SOIC 参数 Datasheet PDF下载

LS120A_SOIC图片预览
型号: LS120A_SOIC
PDF下载: 下载PDF文件 查看货源
内容描述: 单片双NPN晶体管 [MONOLITHIC DUAL NPN TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 270 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LS120A
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems replaces discontinued Intersil IT120A
The LS120A is a monolithic pair of NPN transistors
mounted in a single SOIC package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS120A is a direct replacement for discontinued
Intersil IT120A.
The 8 Pin SOIC provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS120A Features:
High h
fe
at low current
Tight matching
Tight V
BE
tracking
Low Output Capacitance
FEATURES 
Direct Replacement for INTERSIL LS120A 
HIGH 
h
FE
@ LOW CURRENT 
OUTPUT CAPACITANCE 
V
BE
tracking
ABSOLUTE MAXIMUM RATINGS 
1
 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
Maximum Currents 
Collector Current 
 
MIN 
‐‐ 
TYP 
‐‐ 
MAX 
UNITS 
mV 
≥ 200 @ 10µA 
≤ 2.0pF 
≤ 3.0µV°C 
‐65°C to +200°C 
‐55°C to +150°C 
250mW 
500mW 
2.3mW/°C 
4.3mW/°C 
10mA 
 
CONDITIONS 
I
= 10µA, V
CE 
= 5V 
CE 
= 5V 
CE 
= 5V 
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
|V
BE1 
– V
BE2 
Base Emitter Voltage Differential 
∆|(V
BE1 
– V
BE2
|I
B1 
– I
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
BV
CBO
 
BV
CEO
 
Collector to Emitter Voltage 
45 
BV
EBO
 
Emitter‐Base Breakdown Voltage 
6.2 
BV
CCO
 
Collector to Collector Voltage 
60 
h
FE
 
DC Current Gain 
200 
225 
V
CE
(SAT) 
Collector Saturation Voltage 
‐‐ 
I
EBO
 
Emitter Cutoff Current 
‐‐ 
I
CBO
 
Collector Cutoff Current 
‐‐ 
C
OBO
 
Output Capacitance 
‐‐ 
C
C1C2
 
Collector to Collector Capacitance 
‐‐ 
I
C1C2
 
Collector to Collector Leakage Current 
‐‐ 
f
T
 
Current Gain Bandwidth Product 
220 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
0.5 
10 
‐‐ 
 
 
nA 
nA 
pF 
pF 
nA 
MHz 
dB 
SOIC (Top View)
I
= 10µA, I
= 0 
I
= 10µA, I
= 0
2
 
I
= 10µA, I
= 0 
I
= 10µA, V
CE 
= 5V 
I
= 1.0mA, V
CE 
= 5V 
I
= 0.5mA, I
= 0.05mA 
I
= 0, V
EB 
= 3V 
I
= 0, V
CB 
= 45V 
I
= 0, V
CB 
= 5V 
V
CC 
= 0V 
V
CC 
= ±60V 
I
= 1mA, V
CE 
= 5V 
I
= 100µA,  V
CE 
= 5V, BW=200Hz, R
G
= 10KΩ, 
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
Available Packages:
LS120A in SOIC
LS120A available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.