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LS132 参数 Datasheet PDF下载

LS132图片预览
型号: LS132
PDF下载: 下载PDF文件 查看货源
内容描述: 线性系统替换停产Intersil公司IT132 [Linear Systems replaces discontinued Intersil IT132]
分类和应用:
文件页数/大小: 1 页 / 270 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LS132
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems replaces discontinued Intersil IT132
The LS132 is a monolithic pair of PNP transistors
mounted in a single PDIP package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS132 is a direct replacement for discontinued
Intersil IT132.
The 8 Pin PDIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS132 Features:
High h
fe
at low current
Tight matching
Tight V
BE
tracking
Low Output Capacitance
FEATURES 
Direct Replacement for INTERSIL IT132 
HIGH 
h
FE
@ LOW CURRENT 
OUTPUT CAPACITANCE 
V
BE
tracking
ABSOLUTE MAXIMUM RATINGS 
1
 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
Maximum Currents 
Collector Current 
 
MIN 
‐‐ 
TYP 
‐‐ 
MAX 
UNITS 
mV 
≥ 80 @ 10µA 
≤ 2.0pF 
≤ 20µV°C 
‐65°C to +200°C 
‐55°C to +150°C 
250mW 
500mW 
2.3mW/°C 
4.3mW/°C 
10mA 
 
CONDITIONS 
I
= 10µA, V
CE 
= 5V 
CE 
= 5V 
CE 
= 5V 
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
|V
BE1 
– V
BE2 
Base Emitter Voltage Differential 
∆|(V
BE1 
– V
BE2
|I
B1 
– I
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
BV
CBO
 
BV
CEO
 
Collector to Emitter Voltage 
45 
BV
EBO
 
Emitter‐Base Breakdown Voltage 
6.2 
BV
CCO
 
Collector to Collector Voltage 
60 
h
FE
 
DC Current Gain 
80 
100 
V
CE
(SAT) 
Collector Saturation Voltage 
‐‐ 
I
EBO
 
Emitter Cutoff Current 
‐‐ 
I
CBO
 
Collector Cutoff Current 
‐‐ 
C
OBO
 
Output Capacitance 
‐‐ 
C
C1C2
 
Collector to Collector Capacitance 
‐‐ 
I
C1C2
 
Collector to Collector Leakage Current 
‐‐ 
f
T
 
Current Gain Bandwidth Product 
110 
NF 
Narrow Band Noise Figure 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
0.5 
10 
‐‐ 
 
 
nA 
nA 
pF 
pF 
nA 
MHz 
dB 
PDIP (Top View)
I
= 10µA, I
= 0 
I
= 10µA, I
= 0
2
 
I
= 10µA, I
= 0 
I
= 10µA, V
CE 
= 5V 
I
= 1.0mA, V
CE 
= 5V 
I
= 0.5mA, I
= 0.05mA 
I
= 0, V
EB 
= 3V 
I
= 0, V
CB 
= 45V 
I
= 0, V
CB 
= 5V 
V
CC 
= 0V 
V
CC 
= ±60V 
I
= 1mA, V
CE 
= 5V 
I
= 100µA,  V
CE 
= 5V, BW=200Hz, R
G
= 10KΩ, 
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
Available Packages:
LS132 in PDIP
LS132 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.