LS301
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS301 is a monolithic pair of high voltage Super-
Beta NPN transistors mounted in a single P-DIP
package. The monolithic dual chip design reduces
parasitics and gives better performance while ensuring
extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
(See Packaging Information).
LS301 Features:
Very high gain
Tight matching
Low Output Capacitance
FEATURES
HIGH GAIN
LOW OUTPUT CAPACITANCE
TIGHT V
BE
MATCHING
HIGH f
t
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
MIN
‐‐
TYP
0.2
MAX
1
UNITS
mV
h
FE
≥ 2000 @ 1µA TYP.
C
OBO
≤ 2.0pF
|V
BE1
– V
BE2
|= 0.2mV TYP.
100MHz
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
5mA
CONDITIONS
I
C
= 10µA, V
CE
= 5V
CE
= 5V
CE
= 5V
CE
= 5V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
BE1
– V
BE2
|
Base Emitter Voltage Differential
∆|(V
BE1
– V
BE2
|I
B1
– I
h
FE1
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BV
CBO
Collector to Base Voltage
18
BV
CEO
Collector to Emitter Voltage
18
BV
EBO
Emitter‐Base Breakdown Voltage
6.2
BV
CCO
Collector to Collector Voltage
100
‐‐
DC Current Gain
h
FE
2000
‐‐
V
CE
(SAT)
Collector Saturation Voltage
‐‐
I
EBO
Emitter Cutoff Current
‐‐
I
CBO
Collector Cutoff Current
‐‐
C
OBO
Output Capacitance
‐‐
C
C1C2
Collector to Collector Capacitance
‐‐
I
C1C2
Collector to Collector Leakage Current
‐‐
f
T
Current Gain Bandwidth Product
100
NF
Narrow Band Noise Figure
‐‐
‐‐
‐‐
‐‐
‐‐
2000
‐‐
2000
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
0.5
0.2
100
2
2
0.5
‐‐
3
V
V
V
V
V
pA
pA
pF
pF
nA
MHz
dB
I
C
= 10µA, I
E
= 0
I
C
= 10µA, I
B
= 0
I
E
= 10µA, I
C
= 0
2
I
C
= 10µA, I
E
= 0
I
C
= 1µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
I
C
= 500µA, V
CE
= 5V
I
C
= 1mA, I
B
= 0.1mA
I
C
= 0, V
EB
= 3V
I
E
= 0, V
CB
= 10V
I
E
= 0, V
EB
= 1V
V
CC
= 0V
V
CC
= ±80V
I
C
= 200µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 3V, BW=200Hz, R
G
= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS301 in P-DIP
LS301 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
MICROSS [ MICROSS COMPONENTS ]
