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LS311_TO-71 参数 Datasheet PDF下载

LS311_TO-71图片预览
型号: LS311_TO-71
PDF下载: 下载PDF文件 查看货源
内容描述: 单片双NPN晶体管 [MONOLITHIC DUAL NPN TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 278 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LS311
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS311 is a monolithic pair of NPN transistors
mounted in a single TO-71 package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The hermetically sealed TO-71 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS311 Features:
Very high gain
Tight matching
Low Output Capacitance
FEATURES 
HIGH  GAIN
 
TIGHT V
BE
 MATCHING 
HIGH f
t
 
ABSOLUTE MAXIMUM RATINGS 
1
 
@ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
Maximum Power Dissipation 
Continuous Power Dissipation (One side) 
Continuous Power Dissipation (Both sides) 
Linear Derating factor (One side) 
Linear Derating factor (Both sides) 
Maximum Currents 
Collector Current 
 
MIN 
‐‐ 
‐‐ 
TYP 
0.4 
MAX 
UNITS 
mV 
µV/°C 
h
FE
 ≥ 150 @ 10µA‐1mA 
|V
BE1 
– V
BE2 
|= 0.2mV TYP. 
250MHz TYP. @ 1mA 
‐65°C to +200°C 
‐55°C to +150°C 
250mW 
500mW 
2.3mW/°C 
4.3mW/°C 
10mA 
 
CONDITIONS 
I
= 10µA, V
CE 
= 5V 
I
= 10µA, V
CE 
= 5V 
CE 
= 5V 
CE 
= 5V 
CE 
= 5V 
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) 
SYMBOL 
CHARACTERISTIC 
|V
BE1 
– V
BE2 
Base Emitter Voltage Differential 
∆|(V
BE1 
– V
BE2
)| / ∆T 
Base Emitter Voltage Differential 
|I
B1 
– I
|∆ (I
B1 
– I
h
FE1 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
BV
CBO
 
Collector to Base Voltage 
45 
BV
CEO
 
Collector to Emitter Voltage 
45 
BV
EBO
 
Emitter‐Base Breakdown Voltage 
6.2 
BV
CCO
 
Collector to Collector Voltage 
100 
 
150 
 
DC Current Gain 
h
FE
 
150 
150 
V
CE
(SAT) 
Collector Saturation Voltage 
‐‐ 
I
EBO
 
Emitter Cutoff Current 
‐‐ 
I
CBO
 
Collector Cutoff Current 
‐‐ 
C
OBO
 
Output Capacitance 
‐‐ 
C
C1C2
 
Collector to Collector Capacitance 
‐‐ 
I
C1C2
 
Collector to Collector Leakage Current 
‐‐ 
f
T
 
Current Gain Bandwidth Product 
200 
NF 
Narrow Band Noise Figure 
‐‐ 
TYP. 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
MAX. 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
0.25 
0.2 
0.2 
0.5 
‐‐ 
UNITS 
 
 
 
nA 
nA 
pF 
pF 
nA 
MHz 
dB 
CONDITIONS 
I
= 10µA, I
= 0 
I
= 10µA, I
= 0 
I
= 10µA, I
= 0
2
 
I
= 10µA, I
= 0 
I
= 10µA, V
CE 
= 5V 
I
= 100µA, V
CE 
= 5V 
I
= 1mA, V
CE 
= 5V 
I
= 1mA, I
= 0.1mA 
I
= 0, V
CB 
= 3V 
I
= 0, V
CB 
= 30V 
I
= 0, V
CB 
= 5V 
V
CC 
= 0V 
V
CC 
= ±45V 
I
= 1mA, V
CE 
= 5V 
I
= 100µA,  V
CE 
= 5V, BW=200Hz, R
G
= 10KΩ,  
f = 1KHz 
Notes: 
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. 
 
 
TO-71 (Bottom View)
 
 
Available Packages:
LS311 in TO-71
LS311 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.