LS318
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS318 is a monolithic pair of NPN transistors
mounted in a single TO-71 package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS358 for PNP.
The hermetically sealed TO-71 is well suited for hi-rel
and harsh environment applications.
(See Packaging Information).
LS318 Features:
Tight matching
Low Output Capacitance
FEATURES
LOG CONFORMANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
MIN
‐‐
‐‐
‐‐
TYP
0.4
1
‐‐
MAX
1
5
10
UNITS
mV
µV/°C
nA
∆re
= 1Ω TYP.
‐65°C to +200°C
‐55°C to +150°C
250mW
500mW
2.3mW/°C
4.3mW/°C
10mA
CONDITIONS
I
C
= 10µA, V
CE
= 5V
I
C
= 10µA, V
CE
= 5V
T
A
= ‐55°C to +125°C
I
C
= 10µA, V
CE
= 5V
CE
= 5V
CE
= 5V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
|V
BE1
– V
BE2
|
Base Emitter Voltage Differential
∆|(V
BE1
– V
BE2
)| / ∆T
Base Emitter Voltage Differential
Change with Temperature
|I
B1
– I
B2
|
Base Current Differential
|∆ (I
B1
– I
h
FE1
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
∆re
BV
CBO
Collector to Base Voltage
25
BV
CEO
Collector to Emitter Voltage
25
BV
EBO
Emitter‐Base Breakdown Voltage
6.2
BV
CCO
Collector to Collector Voltage
45
150
h
FE
DC Current Gain
150
150
V
CE
(SAT)
Collector Saturation Voltage
‐‐
I
EBO
Emitter Cutoff Current
‐‐
I
CBO
Collector Cutoff Current
‐‐
C
OBO
Output Capacitance
‐‐
C
C1C2
Collector to Collector Capacitance
‐‐
I
C1C2
Collector to Collector Leakage Current
‐‐
f
T
Current Gain Bandwidth Product
200
NF
Narrow Band Noise Figure
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
600
600
‐‐
0.25
0.2
0.2
2
2
0.5
‐‐
3
V
V
V
V
V
nA
nA
pF
pF
nA
MHz
dB
= 5V
I
C
= 10µA, I
E
= 0
I
C
= 10µA, I
B
= 0
I
E
= 10µA, I
C
= 0
2
I
C
= 10µA, I
E
= 0
I
C
= 10µA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V
I
C
= 1mA, V
CE
= 5V
I
C
= 1mA, I
B
= 0.1mA
I
C
= 0, V
EB
= 3V
I
E
= 0, V
CB
= 20V
I
E
= 0, V
CB
= 3V
V
CC
= 0V
V
CC
= ±45V
I
C
= 1mA, V
CE
= 5V
I
C
= 100µA, V
CE
= 5V, BW=200Hz, R
G
= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
TO-71 (Bottom View)
Available Packages:
LS318 in T0-78
LS318 available as bare die
Please contact Micross for full package and die dimensions:
Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.