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LS5906 参数 Datasheet PDF下载

LS5906图片预览
型号: LS5906
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道JFET [N-CHANNEL JFET]
分类和应用: 晶体小信号场效应晶体管
文件页数/大小: 1 页 / 286 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LS5906
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
The LS5906 is a high-performance monolithic dual
JFET featuring tight matching and low drift over
temperature specifications, and is targeted for use in a
wide range of precision instrumentation applications
where tight tracking is required.
The hermetically sealed TO-71 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
FEATURES 
LOW DRIFT 
ULTRA LOW LEAKAGE 
LOW PINCHOFF 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
| V
GS1‐2 
/ T| = 5µV/°C TYP. 
I
= 150fA TYP. 
V
p
 = 2V TYP. 
LS5906 Benefits:
Tight Tracking
Good matching
Ultra Low Leakage
Low Drift
Maximum Temperatures 
Storage Temperature 
‐65°C to +150°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐V
GSS
 
Gate Voltage to Drain or Source 
40V 
‐V
DSO
 
Drain to Source Voltage 
40V 
‐I
G(f)
 
Gate Forward Current 
10mA 
‐I
G
 
Gate Reverse Current 
10µA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 40mW @ +125°C 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS  VALUE  UNITS  CONDITIONS 
| V
GS1‐2 
/ T| max. 
DRIFT VS. 
µV/°C  V
DG
=10V, I
D
=30µA 
TEMPERATURE 
T
A
=‐55°C to +125°C 
| V 
GS1‐2 
| max. 
OFFSET VOLTAGE 
mV 
V
DG
=10V, I
D
=30µA 
TYP. 
60 
‐‐ 
 
‐‐ 
 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
 
‐‐ 
0.1 
0.01 
 
90 
90 
 
‐‐ 
20 
 
‐‐ 
‐‐ 
‐‐ 
MAX. 
‐‐ 
‐‐ 
 
4.5 
 
‐‐ 
 
0.1 
0.1 
 
‐‐ 
‐‐ 
 
70 
 
1.5 
0.1 
UNITS 
 
 
pA 
nA 
pA 
nA 
pA 
 
 
µmho 
CONDITIONS 
V
DS 
= 0                  I
D
=1nA 
      I
= 1nA               I
= 0               I
S
= 0 
= 0V 
 
V
DS
= 10V               I
D
= 1nA 
              V
DS
=10V                 I
D
=30µA 
 
V
DG
= 10V I
D
= 30µA 
T
A
= +125°C
 
V
DS 
=0V      V
GS
= 20V 
T
A
= +125°C 
 
V
GG
= 20V 
 
V
DG
= 10V              V
GS
= 0V 
V
DG
=  10V            I
D
=30µA 
 
∆V
DS 
= 10 to 20V        I
D
=30µA 
∆V
DS 
= 5 to 10V         I
D
=30µA 
V
DS
= 10V      V
GS
= 0V       R
G
= 10MΩ 
f= 100Hz           NBW= 6Hz 
V
DG
=10V   I
D
=30µA   f=10Hz  NBW=1Hz 
 
V
DS
= 10V       V
GS
= 0V       f= 1MHz 
V
DG 
= 20V    I
D
=30µA      
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
BV
GSS
 
Breakdown Voltage 
40 
BV
GGO
 
Gate‐To‐Gate Breakdown 
40 
 
Y
fSS
 
Y
fS
 
|Y
FS1‐2 
/ Y
 FS
 
I
DSS
 
|I
DSS1‐2 
/ I
DSS
 
GATE VOLTAGE 
 
V
GS
(off) or V
p
 
Pinchoff voltage 
0.6 
V
GS
(on) 
Operating Range 
‐‐ 
GATE CURRENT 
 
 
‐I
G
max. 
Operating 
‐‐ 
‐I
G
max. 
High Temperature 
‐‐ 
‐I
GSS
max. 
At Full Conduction 
‐‐ 
‐I
GSS
max. 
High Temperature 
‐‐ 
I
GGO
 
Gate‐to‐Gate Leakage 
‐‐ 
OUTPUT CONDUCTANCE 
 
 
Y
OSS
 
Full Conduction 
‐‐ 
Y
OS
 
Operating 
‐‐ 
|Y
OS1‐2
Differential 
‐‐ 
 
COMMON MODE REJECTION 
 
CMR 
‐20 log |∆V
GS1‐2
/∆V
DS
‐‐ 
CMR 
‐20 log |∆V
GS1‐2
/∆V
DS
‐‐ 
 
NOISE 
 
NF 
Figure 
‐‐ 
e
n
 
Voltage 
‐‐ 
 
CAPACITANCE 
 
C
ISS
 
Input 
‐‐ 
C
RSS
 
Reverse Transfer 
‐‐ 
C
DD
 
Drain‐to‐Drain 
‐‐ 
 
 
dB 
 
 
dB 
nV/√Hz 
 
 
pF 
 
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 (Bottom View)
Micross Components Europe
Available Packages:
LS5906 in TO-71
LS5906 available as bare die
Please contact
Micross
for full package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.