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LS833_SOT-23 参数 Datasheet PDF下载

LS833_SOT-23图片预览
型号: LS833_SOT-23
PDF下载: 下载PDF文件 查看货源
内容描述: 单片双N沟道JFET [MONOLITHIC DUAL N-CHANNEL JFET]
分类和应用:
文件页数/大小: 1 页 / 275 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LS833
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET
The LS833 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LS833 features a 25-
mV offset and 75-µV/°C drift.
The 6 Pin SOT-23 package provides ease of
manufacturing, and a lower cost assembly option.
(See Packaging Information).
FEATURES 
LOW DRIFT 
| V 
GS1‐2 
/ T| ≤75µV/°C 
LOW LEAKAGE 
I
G
 = 0.5pA MAX. 
LOW NOISE 
e
= 70nV/√Hz TYP. 
LOW CAPACITANCE 
C
ISS 
= 3pF MAX. 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
‐65°C to +150°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐V
GSS
 
Gate Voltage to Drain or Source 
40V 
‐V
DSO
 
Drain to Source Voltage 
40V 
‐I
G(f)
 
Gate Forward Current 
10mA 
‐I
G
 
Gate Reverse Current 
10µA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 400mW @ +125°C 
 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS  VALUE  UNITS  CONDITIONS 
| V 
GS1‐2 
/ T| max. 
DRIFT VS. 
75 
µV/°C  V
DG
=10V, I
D
=30µA 
TEMPERATURE 
T
A
=‐55°C to +125°C 
| V 
GS1‐2 
| max. 
OFFSET VOLTAGE 
25 
mV 
V
DG
=10V, I
D=
30µA 
TYP. 
 
‐‐ 
 
‐‐ 
‐‐ 
‐‐ 
 
‐‐ 
‐‐ 
 
90 
90 
 
‐‐ 
20 
 
‐‐ 
‐‐ 
‐‐ 
MAX. 
 
4.5 
 
0.5 
0.5 
1.0 
1.0 
‐‐ 
 
0.5 
 
‐‐ 
‐‐ 
 
70 
 
1.5 
0.1 
UNITS 
 
 
pA 
nA 
pA 
nA 
pA 
 
µmho 
µmho 
 
dB 
CONDITIONS 
S
= 0 
= 0V 
 
 
V
DS
= 10V               I
D
= 1nA 
              V
DS
=10V                 I
D
=30µA 
 
V
DG
= 10V I
D
= 30µA 
T
A
= +125°C
 
V
DS
=0 
V
GS
= 0V, V
GS
= ‐20V, T
A
= +125°C 
V
GG
= 20V 
 
V
DG
= 10V              V
GS
= 0V 
V
DG
=  10V            I
D
= 30µA 
 
∆V
DS 
= 10 to 20V        I
D
=30µA 
∆V
DS 
= 5 to 10V        I
D
=30µA 
V
DS
= 10V      V
GS
= 0V       R
G
= 10MΩ 
f= 100Hz           NBW= 6Hz 
V
DS
=10V   I
D
=30µA   f=10Hz  NBW=1Hz 
 
V
DS
= 10V,  V
GS
= 0V,  f= 1MHz 
V
DS
= 10V,  V
GS
= 0V,  f= 1MHz 
V
DS
= 10V,   I
D
=30µA 
LS833 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
BV
GSS
 
BV
GGO
 
 
Y
fSS
 
Y
fS
 
|Y
FS1‐2 
/ Y
 FS
 
I
DSS
 
|I
DSS1‐2 
/ I
DSS
Mismatch at Full Conduction 
‐‐ 
GATE VOLTAGE 
 
 
V
GS
(off) or V
p
 
Pinchoff voltage 
0.6 
V
GS
(on) 
Operating Range 
‐‐ 
 
GATE CURRENT 
 
‐I
G
max. 
Operating 
‐‐ 
‐I
G
max. 
High Temperature 
‐‐ 
‐I
GSS
max. 
At Full Conduction 
‐‐ 
‐I
GSS
max. 
High Temperature 
I
GGO
 
Gate‐to‐Gate Leakage 
‐‐ 
 
OUTPUT CONDUCTANCE 
 
Y
OSS
 
Full Conduction 
‐‐ 
Y
OS
 
Operating 
‐‐ 
 
COMMON MODE REJECTION 
 
CMR 
‐20 log | V 
GS1‐2
/ V 
DS
‐‐ 
‐20 log | V 
GS1‐2
/ V 
DS
‐‐ 
 
NOISE 
 
NF 
Figure 
‐‐ 
e
n
 
Voltage 
‐‐ 
 
CAPACITANCE 
 
C
ISS
 
Input 
‐‐ 
C
RSS
 
Reverse Transfer 
‐‐ 
C
DD
 
Drain‐to‐Drain 
‐‐ 
 
dB 
nV/√Hz 
 
pF 
pF 
pF 
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
LS833 / LS833 in SOT-23
LS833 / LS833 available as bare die
Please contact
Micross
for full package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.