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LSJ211_TO-92 参数 Datasheet PDF下载

LSJ211_TO-92图片预览
型号: LSJ211_TO-92
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道JFET [N-CHANNEL JFET]
分类和应用:
文件页数/大小: 1 页 / 273 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LSJ211
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J211
The LSJ211 is a n-channel JFET General Purpose
amplifier with low noise and low leakage.
The TO-92 package is well suited for cost sensitive
applications and mass production.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX J211 
HIGH GAIN  
g
fs 
= 7000µmho MIN 
HIGH INPUT IMPEDANCE 
I
GSS 
= 100pA max 
LOW INPUT CAPACITANCE 
C
iss 
= 5pF 
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) 
Maximum Temperatures 
Storage Temperature 
‐55°C to +150°C 
High gain
Operating Junction Temperature 
‐55°C to +135°C 
Low Leakage
Maximum Power Dissipation 
Low Noise
Continuous Power Dissipation  
360mW 
LSJ211 Applications:
Derating over temperature 
3.27 mW/°C 
General Purpose Amplifiers
MAXIMUM CURRENT
UHV / VHF Amplifiers
Gate Current (Note 1) 
10mA 
Mixers
MAXIMUM VOLTAGES 
Oscillators
Gate to Drain Voltage or  Gate to Source Voltage 
 ‐25V 
 
 
LSJ211 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐25 
‐‐ 
‐‐ 
V
DS
 = 0V, I
G
 = ‐1µA 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐2.5 
‐‐ 
‐4.5 
V
DS
 = 15V,  I
D
 = 1nA 
I
DSS
 
Drain to Source Saturation Current (Note 2) 
‐‐ 
20 
mA 
V
DS
 = 15V, V
GS 
= 0V 
I
GSS
 
Gate Reverse Current (Note 3) 
‐‐ 
‐‐ 
‐100 
pA 
V
DS
 = 0V, V
GS 
= ‐15V 
I
G
 
r
DS(on)
 
 
LSJ211 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
g
fs
 
g
os
 
C
iss
 
Input Capacitance 
‐‐ 
‐‐ 
pF 
V
DS
 = 15V,   V
GS 
= 0V , f = 1MHz  
C
rss
 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
e
n
 
Equivalent Noise Voltage 
‐‐ 
10 
‐‐ 
nV/√Hz 
V
DS
 = 15V,   V
GS 
= 0V , f = 1kHz 
 
 
 
 
 
 
 
LSJ211 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
 
UNITS 
CONDITIONS 
LSJ211 Benefits:
Turn On Time 
Turn On Rise Time 
Turn Off Time 
Turn Off Fall Time 
 
 
15 
 
 
ns 
V
DD
 = 10V 
V
GS
(H) = 0V 
 
See Switching Circuit 
Available Packages:
LSJ211 in TO-92
LSJ211 in bare die.
Please contact Micross for full
package and die dimensions
TO-92 (Bottom View)
t
d(on)
 
t
r
 
t
d(off)
 
t
f
 
 
Note 1 ‐ Absolute maximum ratings are limiting values above which LSJ211 serviceability may be impaired.  
 
 
 
Note 2 ‐ Pulse test duration = 2ms 
 
 
 
Note 3 – Approximately doubles for every 10
°C increase in T
A
 
 
 
 
 
 
 
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx