欢迎访问ic37.com |
会员登录 免费注册
发布采购

LSU406_SOIC 参数 Datasheet PDF下载

LSU406_SOIC图片预览
型号: LSU406_SOIC
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道JFET [N-CHANNEL JFET]
分类和应用:
文件页数/大小: 1 页 / 277 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
LSU406
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U406
The LSU406 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU406 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU406 features a 5-
mV offset and 10-µV/°C drift. The LSU406 is a direct
replacement for discontinued Siliconix LSU406.
The 8 Pin P-DIP and 8 Pin SOIC provide ease of
manufacturing, and the symmetrical pinout prevents
improper orientation.
(See Packaging Information).
FEATURES 
LOW DRIFT 
LOW NOISE 
LOW PINCHOFF 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
| V 
GS1‐2 
/ T| = 10µV/°C TYP. 
e
n
 = 6nV/Hz @ 10Hz TYP. 
V
p
 = 2.5V TYP. 
LSU406 Applications:
Wideband Differential Amps
High-Speed,Temp-Compensated Single-Ended
Input Amps
High-Speed Comparators
Impedance Converters and vibrations detectors.
Maximum Temperatures 
Storage Temperature 
‐65°C to +150°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐V
GSS
 
Gate Voltage to Drain or Source 
50V 
‐V
DSO
 
Drain to Source Voltage 
50V 
‐I
G(f)
 
Gate Forward Current 
10mA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 300mW 
 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS  VALUE  UNITS  CONDITIONS 
| V 
GS1‐2 
/ T| max. 
DRIFT VS. 
80 
µV/°C  V
DG
=10V, I
D
=200µA 
TEMPERATURE 
T
A
=‐55°C to +125°C 
| V 
GS1‐2 
| max. 
OFFSET VOLTAGE 
40 
mV 
V
DG
=10V, I
D
=200µA 
 
‐‐ 
 
‐‐ 
‐‐ 
 
‐4 
‐‐ 
‐‐ 
 
‐‐ 
0.2 
 
‐‐ 
 
‐‐ 
20 
 
‐‐ 
‐‐ 
 
10 
 
‐2.5 
‐2.3 
 
‐15 
‐10 
100 
 
20 
 
‐‐ 
 
0.5 
‐‐ 
 
1.5 
 
mA 
 
 
pA 
nA 
pA 
pA 
 
µmho 
µmho 
 
dB 
 
dB 
nV/√Hz 
 
pF 
pF 
S
= 0 
 
V
DG
= 10V              V
GS
= 0V 
 
 
V
DS
= 15V               I
D
= 1nA 
              V
DS
=15V                 I
D
=200µA 
 
V
DG
= 15V I
D
= 200µA 
T
A
= +125°C
 
V
DS
=0 
V
DG
= 15V         T
A
= +125°C 
 
V
DG
= 10V              V
GS
= 0V 
V
DG
=  15V            I
D
= 500µA 
 
V
DS 
= 10 to 20V        I
D
=30µA 
V
DS
= 15V      V
GS
= 0V       R
G
= 10M 
f= 100Hz           NBW= 6Hz 
V
DS
=15V   I
D
=200µA   f=10Hz  NBW=1Hz 
 
V
DS
= 15V      I
D
= 200µA      f= 1MHz 
 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
BV
GSS
 
BV
GGO
 
 
Y
fSS
 
Y
fS
 
|Y
FS1‐2 
/ Y
 FS
 
DRAIN CURRENT 
 
I
DSS
 
Full Conduction 
0.5 
|I
DSS1‐2 
/ I
DSS
Mismatch at Full Conduction 
‐‐ 
 
 
GATE VOLTAGE 
V
GS
(off) or V
p
 
Pinchoff voltage 
‐0.5 
V
GS
(on) 
Operating Range 
‐‐ 
 
 
GATE CURRENT 
‐I
G
max. 
Operating 
‐‐ 
‐I
G
max. 
High Temperature 
‐‐ 
‐I
GSS
max. 
At Full Conduction 
‐‐ 
‐I
GSS
max. 
High Temperature 
 
OUTPUT CONDUCTANCE 
 
Y
OSS
 
Full Conduction 
‐‐ 
Y
OS
 
Operating 
‐‐ 
 
COMMON MODE REJECTION 
 
CMR 
‐20 log | V 
GS1‐2
/ V 
DS
95 
 
NOISE 
 
NF 
Figure 
‐‐ 
e
n
 
Voltage 
‐‐ 
 
CAPACITANCE 
 
C
ISS
 
Input 
‐‐ 
C
RSS
 
Reverse Transfer 
‐‐ 
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
PDIP / SOIC (Top View)
Micross Components Europe
Available Packages:
LSU406 in PDIP / SOIC
LSU406 available as bare die
Please contact
Micross
for full package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.