PN4416A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix PN4416A
The PN4416A is a N-Channel high frequency JFET amplifier
The PN4416A
N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-72 package is well suited
for military applications.
The TO-92 package provides a
lower cost commercial option
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PN4416A
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
10dB (min)
4dB (max)
PN4416A Benefits:
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
‐65°C to +200°C
‐55°C to +135°C
300mW
10mA
‐35V
PN4416A Applications:
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
PN4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BV
GSS
V
GS(off)
I
DSS
I
GSS
g
fs
g
os
C
iss
2
C
rss
Reverse Transfer Capacitance
‐‐
‐‐
4
pF
C
oss
Output Capacitance
2
‐‐
‐‐
2
pF
e
n
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
PN4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
MIN
MAX
MIN
MAX
g
Iss
b
Iss
g
oss
b
oss
G
fs
G
ps
NF
NOTES
Input Conductance
Input Susceptance
Output Conductance
Output Susceptance
Forward Transconductance
Power Gain
Noise Figure
2
2
2
2
CONDITIONS
‐‐
‐‐
‐‐
‐‐
‐‐
18
‐‐
100
2500
75
1000
‐‐
‐‐
2
‐‐
‐‐
‐‐
‐‐
4000
10
‐‐
1000
10000
100
4000
‐‐
‐‐
4
dB
µS
1 . Absolute maximum ratings are limiting values above which PN4416A serviceability may be impaired.
2. Not production tested, guaranteed by design
Available Packages:
PN4416A in TO-72
PN4416A in TO-92
PN4416A in bare die.
TO-72 (Bottom View)
V
DS
= 15V, V
GS
= 0V, f = 1MHz
V
DS
= 10V, V
GS
= 0V, f = 1kHz
V
DS
= 15V, V
GS
= 0V
V
DS
= 15V, I
D
= 5mA
V
DS
= 15V, I
D
= 5mA, R
G
= 1kΩ
Micross Components Europe
TO-92 (Bottom View)
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
MICROSS [ MICROSS COMPONENTS ]
