PN5114
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix PN5114
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The TO-92 provides a low cost option and ease of
manufacturing.
(See Packaging Information).
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PN5114
LOW ON RESISTANCE
r
DS(on)
≤ 75Ω
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐55°C to +200°C
PN5114 Benefits:
Operating Junction Temperature
‐55°C to +200°C
Low On Resistance
Maximum Power Dissipation
I
D(off)
≤
500 pA
Continuous Power Dissipation
500mW
Switches directly from TTL logic
MAXIMUM CURRENT
PN5114 Applications:
Gate Current (Note 1)
I
G
= ‐50mA
Analog Switches
MAXIMUM VOLTAGES
Commutators
Gate to Drain Voltage
V
GDS
= 30V
Choppers
Gate to Source Voltage
V
GSS
= 30V
PN5114 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
I
G
= 1µA, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
4
‐‐
10
V
DS
= ‐15V, I
D
= ‐1nA
V
V
GS(F)
Gate to Source Forward Voltage
‐‐
‐0.7
‐1
I
G
= ‐1mA, V
DS
= 0V
‐‐
‐1.0
‐1.3
V
GS
= 0V, I
D
= ‐15mA
V
DS(on)
Drain to Source On Voltage
‐‐
‐0.7
‐‐
V
GS
= 0V, I
D
= ‐7mA
‐‐
‐0.5
‐‐
V
GS
= 0V, I
D
= ‐3mA
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
PN5114 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
g
fs
Forward Transconductance
‐‐
4.5
‐‐
mS
V
DS
= ‐15V, I
D
= 1mA , f = 1kHz
g
os
Output Conductance
‐‐
20
‐‐
µS
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
75
Ω
I
D
= 0A, V
GS
= 0V, f = 1kHz
C
iss
Input Capacitance
‐‐
20
25
V
DS
= ‐15V, V
GS
= 0V, f = 1MHz
pF
‐‐
5
7
V
DS
= 0V, V
GS
= 12V, f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
6
‐‐
V
DS
= 0V, V
GS
= 7V, f = 1MHz
‐‐
6
‐‐
V
DS
= 0V, V
GS
= 5V, f = 1MHz
e
n
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
V
DG
= 10V, I
D
= 10mA , f = 1kHz
PN5114 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
6
10
6
15
ns
V
GS
(L) = ‐11V
V
GS
(H) = 0V
See Switching Circuit
‐10V
20V
430Ω
100Ω
‐15mA
Available Packages:
PN5114 in TO-92
PN5114 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
TO-92 (Bottom View)
t
d(on)
t
r
t
d(off)
t
f
Note 1 ‐ Absolute maximum ratings are limiting values above which PN5114 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
PN5114 SWITCHING CIRCUIT PARAMETERS
V
DD
V
GG
R
L
R
G
I
D(on)
SWITCHING TEST CIRCUIT
Micross Components Europe
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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