SST4391
Single N-Channel JFET switch
Linear Systems replaces discontinued Siliconix SST4391
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST4391
LOW ON RESISTANCE
r
DS(on)
≤ 30Ω
LOW GATE OPERATING CURRENT
I
D(off)
= 5pA
FAST SWITCHING
t
(ON)
≤= 15ns
SST4391 Benefits:
1
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
Low Error Voltage
Maximum Temperatures
High-Speed Analog Circuit Performance
Storage Temperature
‐65°C to +200°C
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response, Low Glitches
Operating Junction Temperature
‐55°C to +200°C
Eliminates Additional Buffering
Maximum Power Dissipation
Continuous Power Dissipation
350mW
SST4391 Applications:
MAXIMUM CURRENT
Analog Switches
Gate Current (Note 1)
I
G
= 50mA
Choppers,
Sample-and-Hold
MAXIMUM VOLTAGES
Normally “On” Switches, Current Limiters
Gate to Drain Voltage / Gate to Source Voltage
‐35V
SST4391 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
‐35
‐‐
‐‐
I
G
= ‐1µA, V
DS
= 0V
V
V
GS(off)
Gate to Source Cutoff Voltage
‐4
‐‐
‐10
V
DS
= 15V, I
D
= 10nA
V
GS(F)
Gate to Source Forward Voltage
‐‐
0.7
1
I
G
= 1mA, V
DS
= 0V
V
DS(on)
Drain to Source On Voltage
‐‐
0.25
‐‐
V
GS
= 0V, I
D
= 3mA
V
DS(on)
Drain to Source On Voltage
‐‐
0.3
‐‐
V
GS
= 0V, I
D
= 6mA
V
DS(on)
Drain to Source On Voltage
‐‐
0.35
0.4
V
GS
= 0V, I
D
= 12mA
2
I
DSS
Drain to Source Saturation Current
50
‐‐
‐‐
mA
V
DS
= 20V, V
GS
= 0V
I
GSS
Gate Reverse Current
‐‐
‐5
‐100
V
GS
= ‐20V, V
DS
= 0V
I
G
I
D(off)
r
DS(on)
SST4391 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
The SST4391 features many of the superior
characteristics of JFETs which make it a good choice
for demanding analog switching applications and for
specialized amplifier circuits.
g
fs
g
os
r
ds(on)
C
iss
C
rss
C
rss
C
rss
e
n
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
Equivalent Input Noise Voltage
CHARACTERISTIC
Turn On Time
Turn Off Time
Input Capacitance
Reverse Transfer Capacitance
Ω
pF
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MIN
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
‐‐
‐‐
‐‐
nV/√Hz
UNITS
ns
Drain to Source On Resistance
‐‐
30
13
3.6
3.5
3.1
3
TYP
2
2
6
13
CONDITIONS
V
GS
= 0V, I
D
= 0A, f = 1kHz
V
DS
= 20V, V
GS
= 0V, f = 1MHz
V
DS
= 0V, V
GS
= ‐5V, f = 1MHz
V
DS
= 0V, V
GS
= ‐7V, f = 1MHz
V
DS
= 0V, V
GS
= ‐12V, f = 1MHz
V
DS
= 10V, I
D
= 10mA, f = 1kHz
SST4391 SWITCHING ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
V
DD
= 10V, V
GS(H)
= 0V
Notes: 1. Absolute ratings are limiting values above which serviceability may be impaired
2. Pulse test: PW ≤ 300µs, Duty Cycle ≤ 3%
SST4391 SWITCHING CIRCUIT PARAMETERS SWITCHING CIRCUIT
V
GS(L)
R
L
I
D(on)
‐12V
800Ω
12mA
SOT-23 (Top View)
Micross Components Europe
Available Packages:
SST4391 in SOT-23
SST4391 in bare die.
Contact Micross for full package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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