SST5115
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix SST5115
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The SOT-23 provides a low cost option and ease of
manufacturing.
(See Packaging Information).
FEATURES
DIRECT REPLACEMENT FOR SILICONIX SST5115
LOW ON RESISTANCE
r
DS(on)
≤ 100Ω
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐55°C to +200°C
SST5115 Benefits:
Operating Junction Temperature
‐55°C to +200°C
Low On Resistance
Maximum Power Dissipation
I
D(off)
≤
500 pA
Continuous Power Dissipation
500mW
Switches directly from TTL logic
MAXIMUM CURRENT
SST5115 Applications:
Gate Current (Note 1)
I
G
= ‐50mA
Analog Switches
MAXIMUM VOLTAGES
Commutators
Gate to Drain Voltage
V
GDS
= 30V
Choppers
Gate to Source Voltage
V
GSS
= 30V
SST5115 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
I
G
= 1µA, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
3
‐‐
6
V
DS
= ‐15V, I
D
= ‐1nA
V
V
GS(F)
Gate to Source Forward Voltage
‐‐
‐0.7
‐1
I
G
= ‐1mA, V
DS
= 0V
‐‐
‐1.0
‐‐
V
GS
= 0V, I
D
= ‐15mA
V
DS(on)
Drain to Source On Voltage
‐‐
‐0.7
‐0.8
V
GS
= 0V, I
D
= ‐7mA
‐‐
‐0.5
‐‐
V
GS
= 0V, I
D
= ‐3mA
I
DSS
I
GSS
I
G
I
D(off)
r
DS(on)
SST5115 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
g
fs
Forward Transconductance
‐‐
4.5
‐‐
mS
V
DS
= ‐15V, I
D
= 1mA , f = 1kHz
g
os
Output Conductance
‐‐
20
‐‐
µS
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
100
Ω
I
D
= 0A, V
GS
= 0V, f = 1kHz
C
iss
Input Capacitance
‐‐
20
25
V
DS
= ‐15V, V
GS
= 0V, f = 1MHz
pF
‐‐
5
‐‐
V
DS
= 0V, V
GS
= 12V, f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
6
7
V
DS
= 0V, V
GS
= 7V, f = 1MHz
‐‐
6
‐‐
V
DS
= 0V, V
GS
= 5V, f = 1MHz
e
n
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
V
DG
= 10V, I
D
= 10mA , f = 1kHz
SST5115 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
10
20
8
30
ns
V
GS
(L) = ‐7V
V
GS
(H) = 0V
See Switching Circuit
‐6V
12V
910Ω
220Ω
‐7mA
Available Packages:
SST5115 in SOT-23
SST5115 in bare die.
Please contact Micross for full
package and die dimensions
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
SOT-23 (Top View)
t
d(on)
t
r
t
d(off)
t
f
Note 1 ‐ Absolute maximum ratings are limiting values above which SST5115 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
SST5115 SWITCHING CIRCUIT PARAMETERS
V
DD
V
GG
R
L
R
G
I
D(on)
SWITCHING TEST CIRCUIT
Micross Components Europe
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other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.