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U309 参数 Datasheet PDF下载

U309图片预览
型号: U309
PDF下载: 下载PDF文件 查看货源
内容描述: 线性系统替换停产Siliconix的U309 [Linear Systems replaces discontinued Siliconix U309]
分类和应用:
文件页数/大小: 1 页 / 290 K
品牌: MICROSS [ MICROSS COMPONENTS ]
   
U309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U309
The U309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The
hermetically sealed TO-18 package is well suited for
high reliability and harsh environment applications.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR SILICONIX U309 
OUTSTANDING HIGH FREQUENCY GAIN  
LOW HIGH FREQUENCY NOISE 
ABSOLUTE MAXIMUM RATINGS @ 25°C
1
  
G
pg
= 11.5dB 
NF = 2.7dB 
Maximum Temperatures 
Storage Temperature 
‐55°C to +150°C 
High Power Low Noise gain
Operating Junction Temperature 
‐55°C to +135°C 
Dynamic Range greater than 100dB
Maximum Power Dissipation 
Easily matched to 75Ω input
Continuous Power Dissipation  
500mW 
U309 Applications:
MAXIMUM CURRENT
Gate Current 
10mA 
UHV / VHF Amplifiers
MAXIMUM VOLTAGES 
Mixers
Gate to Drain Voltage or  Gate to Source Voltage 
 ‐25V 
Oscillators
 
 
 
 
U309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNIT 
CONDITIONS 
BV
GSS
 
Gate to Source Breakdown Voltage 
‐25 
‐‐ 
‐‐ 
V
DS
 = 0V, I
G
 = ‐1µA 
V
GS(F)
 
Gate to Source Forward Voltage 
0.7 
‐‐ 
V
DS
 = 0V, I
G
 = 10mA 
V
GS(off)
 
Gate to Source Cutoff Voltage 
‐1 
‐‐ 
‐4 
V
DS
 = 10V,  I
D
 = 1nA 
2
I
DSS
 
Drain to Source Saturation Current
 
12 
‐‐ 
30 
mA 
V
DS
 = 10V, V
GS 
= 0V 
I
G
 
Gate Operating Current (Note 3) 
‐‐ 
‐15 
‐‐ 
pA 
V
DG
 = 9V,  I
D
 = 10mA 
r
DS(on)
 
 
U309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
g
fs
 
g
os
 
C
iss
 
C
rss
 
e
n
 
Equivalent Noise Voltage 
‐‐ 
‐‐ 
nV/√Hz 
V
DS
 = 10V,    I
= 10mA ,  f = 100Hz 
 
 
 
 
 
 
 
U309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted) 
SYMBOL 
CHARACTERISTIC 
MIN 
TYP 
MAX 
UNIT 
CONDITIONS 
U309 Benefits:
Noise Figure 
Power Gain
3
 
Forward Transconductance 
Output Conductance 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
f = 105MHz 
f = 450MHz 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
1.5 
2.7 
16 
11.5 
14 
13 
0.16 
0.55 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
dB 
dB 
 
 
 
 
mS 
Available Packages:
U309 in TO-18
U309 in bare die.
TO-18 (Bottom View)
NF 
G
pg
 
g
fg
 
g
og
 
 
 
 
 
V
DS
 = 10V,    I
= 10mA 
 
 
 
Note 1 ‐ Absolute maximum ratings are limiting values above which U309 serviceability may be impaired.  
Note 2 ‐ Pulse test : PW ≤ 300µs, Duty Cycle ≤ 3% 
 
 
 
Note 3 ‐ Measured at optimum input noise match 
 
 
 
 
Micross Components
 
Europe
 
 
 
 
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx