HIGH VOLTAGE
66099-4XX
Rev A
9\25\02
RADIATION TOLERANT OPTOCOUPLER
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
•
Designed to meet or exceed MIL-PRF-19500
radiation requirements
High Current Transfer Ratio - 200% typical
1kVdc electrical input to output isolation
Base lead provided for conventional transistor
biasing
150 V Breakdown voltage
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The
66099-4XX
optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature..........................................................................................................................................-65°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (1/16” (1.6mm) from case for 5 seconds) ................................................................................ 240°C
Input Diode Forward DC Current.........................................................................................................................................40mA
Input Power Dissipation (see Note 1)................................................................................................................................80mW
Reverse Input Voltage ............................................................................................................................................................. 3V
Collector-Base Voltage .........................................................................................................................................................150V
Collector-Emitter Voltage .....................................................................................................................................................150V
Emitter-Base Voltage................................................................................................................................................................ 6V
Continuous Collector Current ............................................................................................................................................300mA
Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW
Notes:
1. Derate linearly 0.80 mW/°C above 25°C.
2. Derate linearly 3.0 mW/°C above 25°C.
Package Dimensions
Schematic Diagram
0.040 [1.02]
MAX.
6 LEADS
Ø0.016 [0.41]
Ø0.019 [0.48]
5
5
6
7
1
A
C
3
0.305 [7.75]
0.335 [8.51]
0.370 [9.40]
0.336 [8.51]
0.500 [12.70]
MIN.
0.155 [3.94]
0.185 [4.70]
Ø0.200 [5.08]
3
2
0.045 [1.14]
0.029 [0.73]
45°
0.034 [0.864]
0.028 [0.711]
7
K
E
B
1
2
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
3 - 20
MII [ Micropac Industries ]
