4N47A
4N48A
4N49A
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
Features:
•
•
•
•
•
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
+1kV electrical isolation
Applications:
•
•
•
•
•
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The
4N47A, 4N48A
and
4N49A’s
can be tested to customer specifications, as well as to MIL-PRF-
19500 JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage............................................................................................................................................................. 1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage .............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA
Peak Forward Input Current (Value applies for tw
<
1
µ
s, PRR
<
300 pps) ...............................................................................1A
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions
6 LEADS
Schematic Diagram
0 .0 1 6 Ø [0 .4 1 ]
0 .0 1 9 Ø [0 .4 8 ]
0 .0 4 0 [1 .0 2 ]
MAX.
5
5 A
6
7
2
1
C
E
3
1
2
0 .3 0 5 [7 .7 5 ]
0 .3 3 5 [8 .5 1 ]
0 .5 0 0 [1 2 .7 0 ]
M IN .
0 .1 5 5 [3 .9 4 ]
0 .1 8 5 [4 .7 0 ]
0 .0 2 2 Ø [5 .0 8 ]
3
0 .0 4 5 [1 .1 4 ]
0 .0 2 9 [0 .7 3 ]
45°
0 .0 3 4 [0 .8 6 4 ]
0 .0 2 8 [0 .7 1 1 ]
7
K
B
N O T E : A L L L IN E A R D IM E N S IO N S A R E IN IN C H E S ( M IL L IM E T E R S )
NOTE: COLLECTOR IS ISOLATED FROM CASE
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION
•
725 E. Walnut St., Garland, TX 75040
•
(972) 272-3571
•
Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@micropac.com
3 - 14
MII [ Micropac Industries ]
