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30SPA0553 参数 Datasheet PDF下载

30SPA0553图片预览
型号: 30SPA0553
PDF下载: 下载PDF文件 查看货源
内容描述: 27.0-32.0 GHz的砷化镓MMIC功率放大器 [27.0-32.0 GHz GaAs MMIC Power Amplifier]
分类和应用: 射频和微波射频放大器微波放大器功率放大器高功率电源
文件页数/大小: 5 页 / 120 K
品牌: MIMIX [ MIMIX BROADBAND ]
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27.0-32.0 GHz GaAs MMIC
Power Amplifier
September 2005 - Rev 01-Sep-05
30SPA0553
Chip Device Layout
Features
Ka-Band 2W Power Amplifier
22.0 dB Small Signal Gain
+33.0 dBm Saturated Output Power
+40.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs
MMIC power amplifier has a small signal gain of 22.0
dB with +33 dBm saturated output power. This MMIC
uses Mimix Broadband’s 0.15
µm
GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness (ΔS21)
Reverse Isolation (S12)
Saturated Output Power (Psat)
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.0V, Vg=-0.7V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
VDC
VDC
mA
mA
mA
Min.
27.0
-
-
-
-
-
-
-
-1.2
-
-
-
Typ.
-
10.0
15.0
22.0
+/-1.0
50.0
+33.0
+5.0
-0.9
100
250
550
Max.
32.0
-
-
-
-
-
-
+6.0
0.0
150
350
750
Pr
e-
pr
od
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
uc
Absolute Maximum Ratings
+6.5 VDC
165,415,790 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
tio
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 5
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n