500-6000 MHz
Dual, Ultra Low Noise, High IP3 Amplifier
October 2007 - Rev 22-Oct-07
CDQ0303-QS
Features
Matched Pair of Transistors for Optimum
Balanced Amplifier Design
AlGaAs/InGaAs/AlGaAs Pseudomorphic High
Electron Mobility Transistor (pHEMT)
High Gain:
25 dB @ 900 MHz
21 dB @ 1900 MHz
Low Noise Figure:
0.6 dB @ 900 MHz
0.7 dB @ 1900 MHz
17 dBm P1dB at 2 GHz
33 dBm OIP3 at 2 GHz
600µm Gate Width: 50 Output Impedance
Excellent Uniformity
Ultra Compact Surface-Mount QFN Package
10 Year MTBF Lifetime
RoHS-Compliant Construction
Typical Specifications (50
Parameter
System)
Units
900 MHz 1900 MHz 2400 MHz
S21 Gain
S11 Input Return Loss
S22 Output Return Loss
Output IP3
Output P1 dB
Noise FIgure
Operating Current Range
Supply Voltage
23.5
-3.0
-3.5
31.8
16.5
0.55
50
3.0
20.0
-4.0
-4.5
32.5
16.0
0.72
50
3.0
16.0
-3.0
-7.0
32.7
16.0
0.89
50
3.0
dB
dB
dB
dBm
dBm
dB
mA
V
Applications
Low Noise Amplifiers and Oscillators Operating
over the RF and Microwave Frequency Ranges
Cellular/PCS/GSM/W-CDMA
Mobile Handsets, Base Station Receivers and
Tower-Mount Amplifiers
WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and
MMDS Applications
General Purpose Discrete pHEMT for Other Ultra
Low-Noise and Medium Power Applications
Note: Typical specifications represents performance for each side of
the matched pair of transistors in the recommended application circuit
board (see page 15). It is anticipated that the pair will be used in a bal-
anced circuit configuration, hence the matches are optimized for best
noise figure and OIP3 performance.
Description
The CDQ0303-QS is a dual, ultra low-noise amplifi-
er combining high gain, state-of-the-art noise figure and high
IP3. Utilizing Mimix's distinctive in-house GaAs fabrica-
tion advantage and matched pair technology, co-located
matched transistor die are assembled in the 4mm x 4mm
QFN package. The low-cost, surface-mount, 16 terminal,
plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices
in a single package makes the CDQ0303-QS an ideal product
for balanced amplifier implementation. It is intended for
many applications operating in the 900 MHz to 2400 MHz
frequency range. It can also be used in a dual-band configu-
ration where a single transistor is used for each band.
Mimix's high performance packaged pHEMTs are
ideal for use in all applications where low-noise figure, high
gain, medium power and good intercept is required. The
CDQ0303-QS is the perfect solution for the first or second
stage of a base station LNA due to the excellent combination
of low-noise figure and linearity. It is also well suited as a
medium power driver stage in pole-top amplifiers and other
transmit functions, particularly as the low thermal resistance
allows extended power dissipation when voltage and current
are adjusted for increased power and linearity.
Page 1 of 14
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
