11.0-20.0 GHz GaAs MMIC
Packaged Driver Amplifier
March 2006 - Rev 08-Mar-06
CMM1118-QT
Features
20 dB Gain
14 dBm P1dB
3x3 QFN Package
Single Power Supply
5-7 V, 90 mA Self Bias
On-Chip ESD Protection
Circuit Description
Mimix Broadband’s 3 stage 11.0 to 20.0 GHz driver
amplifier is packaged in surface mount 3x3 QFN
package. The device is a self-biased, single supply
design with 20 dB gain and 14 dBm P1dB. This MMIC
uses Mimix Broadband’s 0.25um optical pHEMT
process.
Absolute Maximum Ratings
Supply Voltage
RF Input Power
Storage Temperature (Tstg)
Junction Temperature
Operating Temperature
+8 V
+10 dBm
-55 ºC to +125 ºC
175 ºC
-40 ºC to +85ºC
Electrical Characteristics (T=25ºC)
Parameter
Frequency Range
Gain
Input Return Loss
Output P1dB
Output IP3
Supply Voltage
Units
GHz
dB
dBm
dBm
V
Min.
11
-
-
-
-
-
Typ.
-
20
-10.5
14
22
5
Max.
20
-
-
-
-
-
Typical Parameters
Parameter
Frequency
Gain
IP Return Loss
Op Return Loss
P1dB
OIP3
12
21.5
-10.3
-8
12.3
23.3
14
20.4
-11.2
-18.8
12.3
22.2
Typical
16
19.6
-10.6
-11
15.5
23
18
19.2
-17
-7.5
14.7
23
20
20
-5.5
-8
16
22.2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.