30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
May 2010 - Rev 19-May-10
CMM3030-BD
Chip Device Layout
Features
Ultra Wide Band Driver Amplifier
Low Gain Ripple
Positive Gain Slope
11.0 dB Small Signal Gain
+22.0 dBm P1dB Compression Point
+31.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 30.0 kHz-30.0 GHz
GaAs MMIC distributed amplifier has a small signal
gain of 11.0 dB with a +22.0 dBm P1dB output
compression point. This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to
ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
1
+12.0 VDC
375 mA
-5V
+23.0 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Input Return Loss (S11)
3
Output Return Loss (S22)
3
Small Signal Gain (S21)
3
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
2
Output Third Order Intermods (OIP3)
2
Saturated Output Power (Psat)
2
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=8.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
0.00003
9.0
9.0
8.0
-
-
-
-
-
-
-1.5
-
Typ.
-
14.0
14.0
11.0
+/-0.5
35.0
+22.0
+31.0
+24.0
+8.0
-0.5
275
Max.
30.0
-
-
-
-
-
-
-
-
+9.0
0.0
350
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
(2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.
(3) Unless otherwise indicated, Min./Max. over 2.0-30.0 GHz and biased at Vd=8.0V.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
