16.0-30.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1004
Chip Device Layout
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
2.2 dB Noise Figure at Low Noise Bias
+19.0 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 16.0-30.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a noise figure of 2.2 dB across the band. This MMIC
uses Mimix Broadband’s 0.15
µm
GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Parameter
Frequency Range (f )
Input Return Loss (S11)
3
Output Return Loss (S22)
3
Small Signal Gain (S21)
3
Gain Flatness (∆S21)
Reverse Isolation (S12)
3
Noise Figure (NF)
4
Output Power for 1 dB Compression (P1dB)
1,2,3
Output Third Order Intercept Point (OIP3)
1,2,3
Saturated Output Power (Psat)
1,2,3
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1c,2c)
Supply Current (Id) (Vd=4.0V, Vg=-0.3V Typical)
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
200 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF Table
5
MTTF Table
5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
16.0
6.0
10.0
18.0
-
40.0
-
-
-
-
-
-1.2
-
Typ.
-
14.0
14.0
21.0
+/-1.0
50.0
2.2
+19.0
+29.0
+22.0
+4.0
-0.3
90
Max.
30.0
-
-
24.0
-
-
3.0
-
-
-
+6.0
+0.1
180
(1) Optional low noise bias Vd1,2=4.0V, Id=90mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=6.0V, Id1=90mA, Id2=90mA.
(4) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=4.0V, Id1=45mA, Id2=45mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
MIMIX [ MIMIX BROADBAND ]
