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XB1006 参数 Datasheet PDF下载

XB1006图片预览
型号: XB1006
PDF下载: 下载PDF文件 查看货源
内容描述: 18.0-38.0 GHz的砷化镓MMIC缓冲放大器 [18.0-38.0 GHz GaAs MMIC Buffer Amplifier]
分类和应用: 缓冲放大器
文件页数/大小: 14 页 / 958 K
品牌: MIMIX [ MIMIX BROADBAND ]
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18.0-38.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
B1006
Chip Device Layout
Features
High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s three stage 18.0-38.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a positive gain slope, and a noise figure of 3.2 dB
across the band. This MMIC uses Mimix Broadband’s
0.15
µm
GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Parameter
Frequency Range (f )
Input Return Loss (S11)
3
Output Return Loss (S22)
3
Small Signal Gain (S21)
3
Gain Flatness (∆S21)
Reverse Isolation (S12)
3
Noise Figure (NF)
4
Output Power for 1 dB Compression (P1dB)
1,2,3
Output Third Order Intercept Point (OIP3)
1,2,3
Saturated Output Power (Psat)
1,2,3
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id) (Vd=3.5V, Vg=-0.3V Typical)
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
120 mA
+0.3 VDC
+5 dBm
-65 to +165
O
C
-55 to MTTF Table
5
MTTF Table
5
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
18.0
4.0
7.0
19.0
-
40.0
-
-
-
+14.0
-
-1.2
-
Typ.
-
14.0
12.0
21.0
+/-2.0
50.0
3.2
+15.0
+25.0
+18.0
+3.5
-0.3
50
Max.
38.0
-
-
27.0
-
-
4.5
-
-
-
+5.5
+0.1
100
(1) Optional low noise bias Vd1,2=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated, min/max over 18.0-38.0 GHz and biased at Vd=5.5V, Id1=50mA, Id2=50mA.
(4) Unless otherwise indicated, min/max over 20.0-38.0 GHz and biased at Vd=3.5V, Id1=25mA, Id2=25mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 14
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.