3.5-8.0 GHz GaAs MMIC
Packaged Low Noise Amplifier
February 2009 - Rev 20-Feb-09
L1007-QT
Features
12 dB Gain
2 dB Noise Figure
3x3 QFN Package
Single Power Supply
3-5 V, 40 mA Self Bias
On-Chip ESD Protection
Circuit Description
Mimix Broadband’s 3.5 to 8.0 GHz low noise
amplifier is packaged in surface mount 3x3 QFN
package. The device is a self-biased, single supply
design with 12 dB gain and 2 dB noise figure. This
MMIC uses Mimix Broadband’s optical pHEMT
process.
Absolute Maximum Ratings
Supply Voltage
RF Input Power
Storage Temperature (Tstg)
Junction Temperature
Operating Temperature
+6 V
+10 dBm
-55 ºC to +125 ºC
175 ºC
-40 ºC to +85ºC
Operation beyond these conditions may cause permanent damage
to the device.
Electrical Characteristics (T=25ºC)
Parameter
Frequency Range
Gain
Input Return Loss
Noise Figure
Output P1dB
Output IP3
Supply Voltage
Units
GHz
dB
dB
dBm
dBm
V
Min.
3.5
-
-
-
-
-
-
Typ.
-
12
-10
2.0
13.0
25.0
3
Max.
8
-
-
-
-
-
-
Typical Parameters at Vdd=5V @ 25ºC
Parameter
Frequency
Gain
NF
OP1dB
OIP3
Current
Condition
Unit
GHz
dB
dB
dBm
dBm
mA
4.0
15.0
1.7
13.0
25.0
44.0
5.0
15.0
1.6
14.0
28.0
44.0
Pout=OP1dB-10, 10 MHz Freq Space
Typical
6.0
7.0
13.5
11.5
1.7
2.0
14.5
14.0
29.0
29.0
44.0
44.0
8.0
10.0
2.4
13.0
28.5
44.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice.
©2009
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.