32.0-46.0 GHz GaAs MMIC
Balanced Mixer
September 2007 - Rev 04-Sep-07
Mechanical Drawing
1.300
(0.051)
0.993
(0.039)
0.386
(0.015)
0.785 0.983
(0.031) (0.039)
M1000-BD
2
1
3
4
5
0.993
(0.039)
0.0
0.0
6
0.536
(0.021)
1.300
(0.051)
(Note: Engineering designator is 40BRFM0058)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.048 mg.
Bond Pad #1 (LO)
Bond Pad #2 (Vg1)
Bond Pad #3 (Vg2)
Bond Pad #4 (Vd)
Bond Pad #5 (RF)
Bond Pad #6 (IF)
Bias Arrangement
Vg1
Vg2
[1]
Vd
[1]
2
LO
3
4
5
RF
1
App Note [1] Biasing
- As shown in the bonding
diagram, the pHEMT mixer devices are operated using a
separate gate voltage Vg1. Set Vg1=-0.6V for optimum
conversion loss performance. pHEMT test device (Vd,Vg2)
with 100 Ohm resistor is provided so that mixer gate bias
can be corrected for local V
to
.
App Note [2] Bias Arrangement
- Each DC pad (Vg1)
needs to have DC bypass capacitance (~100-200 pF) as
close to the device as possible. Additional DC bypass
capacitance (~0.01 uF) is also recommended.
6
IF
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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