12.0-16.0 GHz Power Amplifier
QFN, 3x3mm
February 2008 - Rev 10-Feb-08
P1042-QT
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 5.0V with 125, 125, 250 mA respectively.
It is recommended to use active bias to keep the currents constant in order to maintain the best performance over temperature. Depending on the
supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current.The gate of the pHEMT is controlled to maintain correct drain current
and thus drain voltage.The typical gate voltage needed to do this is -1.0V. Make sure to sequence the applied voltage to ensure negative gate bias
is available before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as
possible, with additional 10µF decoupling caps.
Recommended Layout
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Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
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