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XR1007-BD-EV1 参数 Datasheet PDF下载

XR1007-BD-EV1图片预览
型号: XR1007-BD-EV1
PDF下载: 下载PDF文件 查看货源
内容描述: 11.0-17.0 GHz的砷化镓MMIC接收器 [11.0-17.0 GHz GaAs MMIC Receiver]
分类和应用:
文件页数/大小: 8 页 / 444 K
品牌: MIMIX [ MIMIX BROADBAND ]
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11.0-17.0 GHz GaAs MMIC
Receiver
October 2006 - Rev 13-Oct-06
R1007
Chip Device Layout
Features
Fully Integrated Design
2.2 dB Noise Figure
13.5 dB Conversion Gain
20 dB Image Rejection
+4 dBm IIP3
+3 dBm LO drive Level
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 11.0-17.0 GHz GaAs MMIC receiver has a noise
figure of 2.2 dB and 20.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO buffer amplifer. The image
reject mixer eliminates the need for a bandpass filter after the LNA to
remove thermal noise at the image frequency. I and Q mixer outputs
are provided and an external 90 degree hybrid is required to select the
desired sideband. This MMIC uses Mimix Broadband’s 0.15
µm
GaAs
PHEMT device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
250, 200 mA
+0.3 VDC
+17 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF)
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)
2
LO Input Drive (P
LO
)
Image Rejection
2
Noise Figure (NF)
2
Isolation LO/RF
Input Third Order Intercept (IIP3)
1
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd3)
Gate Bias Voltage (Vg1,2)
Gate Bias Voltage (Vg3)
Gate Bias Voltage (Vg4) Mixer, Doubler
Supply Current (Id1) (Vd1=3.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=5.0V,Vg=-0.1V Typical)
Units
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dB
dBm
VDC
VDC
VDC
VDC
VDC
mA
mA
Min.
11.0
9.0
DC
-
10.0
-
15.0
-
-
-
-
-
-1.2
-1.2
-1.2
-
-
Typ.
-
-
2.0
15.0
13.5
+3.0
20.0
2.2
+4.0
+4.0
+4.0
-0.3
-0.1
-0.5
80
100
40.0/40.0
Max.
17.0
19.0
TBD
-
-
-
-
3.0
-
-
+5.0
+5.0
+0.1
+0.1
+0.1
120
150
(1) Measured using constant current.
(2) Guaranteed specifications from 12 to 15 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2006
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.