欢迎访问ic37.com |
会员登录 免费注册
发布采购

XU1001-BD 参数 Datasheet PDF下载

XU1001-BD图片预览
型号: XU1001-BD
PDF下载: 下载PDF文件 查看货源
内容描述: 33.0-40.0 GHz的砷化镓MMIC变送器 [33.0-40.0 GHz GaAs MMIC Transmitter]
分类和应用:
文件页数/大小: 8 页 / 292 K
品牌: MIMIX [ MIMIX BROADBAND ]
 浏览型号XU1001-BD的Datasheet PDF文件第2页浏览型号XU1001-BD的Datasheet PDF文件第3页浏览型号XU1001-BD的Datasheet PDF文件第4页浏览型号XU1001-BD的Datasheet PDF文件第5页浏览型号XU1001-BD的Datasheet PDF文件第6页浏览型号XU1001-BD的Datasheet PDF文件第7页浏览型号XU1001-BD的Datasheet PDF文件第8页  
33.0-40.0 GHz GaAs MMIC
Transmitter
April 2007 - Rev 19-Apr-07
Features
Sub-Harmonic Transmitter
Low DC Power Consumption
Optional Power Bias
8.0 dB Conversion Gain
30 dB LO/RF Isolation
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has
a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF
isolation. The device has a pair of sub-harmonic mixers
configured to form an image reject mixer which requires an
LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The
image reject mixer reduces the need for unwanted sideband
filtering before the power amplifier. The use of the
sub-harmonic mixer makes the provision of the LO easier than
for fundamental mixers at these frequencies. I and Q mixer
inputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface passivation
to protect and provide a rugged part with backside via holes
and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
U1001-BD
Chip Device Layout
U1001
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
70 mA
+0.3 VDC
+10 dBm
-65 to +165
O
C
-55 to MTTF Table
4
MTTF Table
4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21) (USB/LSB)
3
LO Input Drive (P
LO
)
Image Rejection (USB/LSB)
3
Isolation LO/RF @ LOX2
Input Power for 1 dB Compression (P1dB)
1,2
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=3.0V, Vg=-0.5V Typical)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
mA
Min.
34.0
33.0
15.5
DC
-
3.0/3.0
-
8.0/5.0
-
-
-
-1.0
-
Typ.
-
-
-
-
12.0
8.0/8.0
+12.0
12.0/12.0
30.0
+3.0
+3.0
-0.5
30
Max.
40.0
40.0
21.5
3.0
-
-
-
-
-
-
+5.5
0.0
60
(1) Optional power bias Vd=5.5V, Id=60mA will typically yield improved P1dB.
(2) Measured using constant current.
(3) Min/Max limits over 33.0-39.5 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.