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XU1002-BD-000V 参数 Datasheet PDF下载

XU1002-BD-000V图片预览
型号: XU1002-BD-000V
PDF下载: 下载PDF文件 查看货源
内容描述: 18.0-25.0 GHz的砷化镓MMIC变送器 [18.0-25.0 GHz GaAs MMIC Transmitter]
分类和应用: 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
文件页数/大小: 8 页 / 236 K
品牌: MIMIX [ MIMIX BROADBAND ]
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18.0-25.0 GHz GaAs MMIC
Transmitter
August 2007 - Rev 20-Aug-07
U1002-BD
Chip Device Layout
Features
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+20.0 dBm Output Third Order Intercept (OIP3)
2.0 dBm LO Drive Level
15.0 dB Image Rejection, 10.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband’s 18.0-25.0 GHz GaAs MMIC transmitter has a
+20.0 dBm output third order intercept and 15.0 dB image
rejection across the band. This device is an image reject
sub-harmonic anti-parallel diode mixer followed by a balanced two
stage output amplifier and includes an integrated LO buffer
amplifier. The image reject mixer reduces the need for unwanted
sideband filtering before the power amplifier. The use of a
sub-harmonic mixer makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer inputs are
provided and an external 90 degree hybrid is required to select the
desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The
chip has surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process. This device
is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
General Description
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,Id2)
Gate Bias Voltage (Vg)
Input Power (IF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+4.5 VDC
320, 165 mA
+0.3 VDC
0.0 dBm
-65 to +165
O
C
-55 to MTTF Table
3
MTTF Table
3
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Output Return Loss RF (S22)
Small Signal Conversion Gain IF/RF (S21)
2
LO Input Drive (P
LO
)
Image Rejection
2
Isolation LO/RF @ LOx1/LOx2
Output Third Order Intercept (OIP3)
1,2
Drain Bias Voltage (Vd1)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical)
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
Units
GHz
GHz
GHz
GHz
dB
dB
dBm
dBc
dB
dBm
VDC
VDC
VDC
mA
mA
Min.
18.0
18.0
7.5
DC
-
-
-
-
-
-
-
-
-1.2
-
-
Typ.
-
-
-
-
16.0
10.0
+2.0
15.0
10.0
+20.0
+3.5
+4.0
-0.3
230
116
Max.
25.0
21.0
11.5
3.0
-
-
-
-
-
-
+4.5
+4.5
+0.1
280
140
Page 1 of 8
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.