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XX1000-BD-000V 参数 Datasheet PDF下载

XX1000-BD-000V图片预览
型号: XX1000-BD-000V
PDF下载: 下载PDF文件 查看货源
内容描述: 7.5-25.0 / 15.0-50.0 GHz的砷化镓MMIC有源倍频器 [7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler]
分类和应用: 倍频器
文件页数/大小: 7 页 / 305 K
品牌: MIMIX [ MIMIX BROADBAND ]
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7.5-25.0/15.0-50.0 GHz GaAs MMIC
Active Doubler
August 2007 - Rev 16-Aug-07
X1000-BD
Chip Device Layout
Features
Excellent Broadband Mixer Driver
Single Ended Fed Doubler with Distributed
Buffer Amplifier
Excellent LO Driver for Mimix Receivers
+15 dBm Output Drive
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s single ended fed (no external
balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC
doubler has a +15.0 dBm output drive and is an
excellent LO doubler that can be used to drive
fundamental mixer devices. It is also well suited to
drive Mimix's XR1002 receiver device. This MMIC uses
Mimix Broadband’s 0.15
µm
GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Harmonic Gain (fout)
Fundamental Rejection (fin)
Saturated Output Power (Psat)
RF Input Power (RF Pin)
Output Power at +0.0 dBm Pin (Pout)
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V, Vg2=0.0V Typical)
Source Voltage (Vss)
Source Current (Iss)
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Voltage (Vss)
Supply Current (Id)
Supply Current (Iss)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
-6.0 VDC
300 mA
60 mA
+0.3 VDC
+12.0 dBm
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Units
GHz
GHz
dB
dB
dB
dBc
dBm
dBm
dBm
VDC
VDC
VDC
mA
VDC
mA
Min.
7.5
15.0
-
-
-
-
-
-10.0
-
-
-1.2
-1.2
-
-5.5
25
Typ.
-
-
TBD
12.0
13
20
+15
-
+13.0
+5.0
-0.6
0.0
220
-5.0
50
Max.
25.0
50.0
-
-
-
-
-
+10.0
-
+5.5
+0.1
+0.1
250
-2.0
60
Page 1 of 7
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2007
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
XX1000-BD