Monolithic InGaP HBT MMIC Amplifier
GVA-81+
Electrical Specifications(1) at 25°C and 5V, unless noted
Parameter
Condition
(GHz)
Min.
Typ.
Max.
Units
Frequency Range(2)
Gain
DC
7
GHz
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
9.5
10.5
10.5
10.0
9.3
8.7
8.1
11.5
dB
8.8
7.5
11.0
10.0
7.6
Magnitude of Gain Variation versus Temperature (3)
(values are negative)
0.0005
0.0010
0.0016
0.0020
0.0025
0.0036
0.0063
38.0
27.0
20.1
17.4
16.9
18.5
14.3
21.4
20.6
17.4
14.5
13.1
14.8
13.2
20.8
19.1
19.1
19.7
19.7
19.4
17.7
17.7
42.0
38.3
36.6
35.0
33.2
31.1
31.1
7.3
dB/°C
0.005
dB
Input Return Loss
14.0
12.0
dB
Output Return Loss
Reverse Isolation
dB
dBm
17.5
17.5
17.5
Output Power @1 dB compression
dBm
Output IP3
32.0
8.6
9.0
dB
Noise Figure
7.3
7.4
7.6
7.7
8.3
8.9
Group Delay
2.0
98
5.0
psec
V
Device Operating Voltage
4.8
5.2
Device Operating Current
93
103
62
112
mA
Device Current Variation vs. Temperature
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
µA/°C
mA/mV
°C/W
0.036
65
(1) Measured on Mini-Circuits test board TB-313. See Characterization Test Circuit (Fig. 1)
(2) Guaranteed specification DC*-7 GHz. *Low frequency cut off determined by external coupling capacitors and RF Choke (RFC).
(3) (Gain at 85°C - Gain at -45°C)/130
®
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IF/RF MICROWAVE COMPONENTS
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