PRODUCT INFORMATION
750
nm
1A354
850
nm
High-Performance PIN
The very high speed and low capaci-
tance of this GaAs PIN Photodiode
makes it ideal for datacom and general
purpose applications. Its double-lens
optical system is designed for single-
mode fiber as well as for multimode
fiber with core diameter up to
62.5µm. And a reverse voltage of only
5 Volts makes interfacing to a pream-
plifier easy.
Datacom, General Purpose
Optical and Electrical Characteristics
PARAMETER
SYMBOL
MIN.
TYP
.
MAX.
UNIT
(25°C Case Temperature)
TEST CONDITION
Responsivity
Bandwidth
(Fig.1&2) (Table 1)
R
f
c
C
I
d
0.35 0.45
1
1
0.4
2
1
A/W
GHz
pF
nA
=850nm
R
L
=50
f=1MHz
Capacitance
(Fig. 4)
Dark Current
Operating Conditions:
VR=5V.
Fiber: Single-mode to multimode 62.5/125
µ
m.
Absolute Maximum Ratings
PARAMETER
SYMBOL
LIMIT
Storage Temperature
Operating Temperature
Reverse Voltage
Soldering Temperature
(2mm from the case for 10 sec)
T
stg
T
op
V
R
T
sld
-55 to +125 C
-55 to +125 C
30V
260 C
Thermal Characteristics
Ø4.7
Ø1.5
0.6
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Temperature Coefficient - Dark Current
dI
d
/dT
j
5
%/ C
3.7
14
0.4
CATHODE
2.5
5.4
BOTTOM VIEW
The diode chip is isolated from the case.
TO-46 Package With Lens
12627.11 1998-02-04
All dimensions in mm
ANODE
CASE
Europe:
Tel
(46) 8 58 02 45 00
Fax
(46) 8 58 02 01 10
Tel
(44) 1291 436180
Fax
(44) 1291 436771
America:
Tel
1-800-96MITEL
Fax
(613) 592-6909
Asia:
Tel
(65) 293 5312
Fax
(65) 293 8527
MITEL [ MITEL NETWORKS CORPORATION ]
