MITSUBISHI IGBT MODULES
CM100DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
200
180
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
3.5
4
8
8.5
T
j
= 25°C
V
GE
= 20V
15
11
10
9.5
3
V
GE
= 15V
T
j
= 25°C
2.5
T
j
= 125°C
2
1.5
1
0.5
0
9
0
40
80
120
160
200
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE (sat)
(V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
3
EMITTER CURRENT I
E
(A)
7
5
3
2
5
T
j
= 25°C
T
j
= 25°C
4
10
2
7
5
3
2
3
I
C
= 200A
2
I
C
= 100A
I
C
= 40A
10
1
7
5
3
2
1
0
6
8
10
12
14
16
18
20
10
0
0.5
1
1.5
2
2.5
3
3.5
GATE-EMITTER VOLTAGE V
GE
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
10
3
CAPACITANCE C
ies
, C
oes
, C
res
(nF)
7
5
3
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
f
t
d(off)
SWITCHING TIMES (ns)
10
2
7
5
3
2
t
d(on)
t
r
Conditions:
V
CC
= 600V
V
GE
=
±15V
R
G
= 3.1Ω
T
j
= 125°C
Inductive load
2
3
5 7
10
2
2
3
5 7
10
3
0
10
1
7
5
3
2
C
res
10
–1 –1
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
10
0 1
10
COLLECTOR CURRENT I
C
(A)
Sep.2000
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
