MITSUBISHI IGBT MODULES
CM100DY-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
200
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
200
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25 C
o
15
5
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
12
160
V
GE
= 20V
11
160
4
120
10
120
3
80
80
2
40
7
9
8
40
1
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
0
0
40
80
120
160
200
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25°C
EMITTER CURRENT, I
E
, (AMPERES)
7
5
3
2
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
10
2
8
I
C
= 200A
C
ies
10
1
6
I
C
= 100A
10
2
7
5
3
2
4
C
oes
10
0
2
I
C
= 40A
10
1
7
V
GE
= 0V
C
res
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
1.0
1.5
2.0
2.5
3.0
3.5
10
-1
10
-1
10
0
10
1
10
2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
t
f
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 100A
16
SWITCHING TIME, (ns)
t
d(off)
V
CC
= 400V
V
CC
= 600V
10
2
t
d(on)
12
10
2
t
rr
I
rr
10
1
8
V
CC
= 600V
V
GE
= ±15V
R
G
= 3.1Ω
T
j
= 125°C
t
r
di/dt = -200A/µsec
T
j
= 25°C
4
10
1
10
0
10
1
COLLECTOR CURRENT, I
C
, (AMPERES)
10
2
10
1
10
0
10
0
10
1
EMITTER CURRENT, I
E
, (AMPERES)
10
2
0
0
200
400
600
800
GATE CHARGE, Q
G
, (nC)
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
