MITSUBISHI IGBT MODULES
CM150DY-12NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
(Tj = 25°C, unless otherwise specified)
Symbol
V
CES
V
GES
I
C
I
CM
I
E (Note 1)
I
EM (Note 1)
P
C (Note 3)
T
j
T
stg
V
iso
—
—
—
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Torque strength
Weight
G-E Short
C-E Short
DC, T
C
’ =97°C
*3
Pulse
Pulse
T
C
= 25°C
Conditions
Ratings
600
±20
150
300
150
300
590
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Unit
V
V
A
A
A
A
W
°C
°C
Vrms
N•m
N•m
g
(Note 2)
(Note 2)
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M5 screw
Mounting M6 screw
Typical value
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note 1)
Q
rr (Note 1)
V
EC(Note 1)
R
th(j-c)
Q
R
th(j-c)
R
R
th(c-f)
R
th(j-c’)
Q
R
G
Parameter
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
*1
Contact thermal resistance
Thermal resistance
External gate resistance
Test conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 15mA, V
CE
= 10V
±V
GE
= V
GES
, V
CE
= 0V
I
C
= 150A, V
GE
= 15V
V
CE
= 10V
V
GE
= 0V
V
CC
= 300V, I
C
= 150A, V
GE
= 15V
V
CC
= 300V, I
C
= 150A
V
GE
=
±15V
R
G
= 4.2Ω, Inductive load
I
E
= 150A
I
E
= 150A, V
GE
= 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied
*2
(1/2 module)
Case temperature measured point is just under the chips
T
j
= 25°C
T
j
= 125°C
Min.
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.2
Limits
Typ.
—
6
—
1.7
1.7
—
—
—
600
—
—
—
—
—
2.5
—
—
—
0.07
—
—
Max.
1
7.5
0.5
2.2
—
23
2.8
0.9
—
120
100
300
300
150
—
2.6
0.21
0.47
—
0.16
*3
42
Unit
mA
V
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
K/W
Ω
*
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of
λ
= 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
If you use this value, R
th(f-a)
should be measured just under the chips.
Note 1. I
E
, V
EC
, t
rr
& Q
rr
represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
jmax
rating.
3. Junction temperature (T
j
) should not increase beyond 150°C.
Feb.
2009
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
